Fast optical switch and its applications in optical communication
View Patent ↗A fast optical switch can be fabricated/constructed, when a vanadium dioxide (VO 2 ) and a two-dimensional (2-D) material is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce an insulator-to-metal phase transition (IMT) in vanadium dioxide. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with or without a wavelength converter are also described.
1. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is partially parallel or substantially parallel to a section of the second optical waveguide, wherein both the section of the first optical waveguide and the section of the second optical waveguide comprise: an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide and a two-dimensional (2-D) material, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide.
2. The optical switch according to claim 1 , further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration.
3. The optical switch according to claim 1 , further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer.
4. The optical switch according to claim 1 , further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer.
5. The optical switch according to claim 1 , further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer.
6. The optical switch according to claim 1 , further comprising coupling with a wavelength converter.
7. The optical switch according to claim 6 , comprising the wavelength converter, wherein the wavelength converter comprises As 2 S 3 chalcogenide material or two-dimensional (2-D) photonic crystals As 2 S 3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide.
8. The optical switch according to claim 6 , further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier.
9. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein a section of the first optical waveguide is partially parallel or substantially parallel to a section of the second optical waveguide, wherein both the section of the first optical waveguide and the section of the second optical waveguide comprise: an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide and a two-dimensional (2-D) material, wherein the ultra thin-film is receiving a light pulse, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide.
10. The optical switch according to claim 9 , further comprising an optical waveguide to propagate a beam of a light pulse and a focusing lens for focusing the beam of the light pulse,
wherein an optical intensity of the beam of the light pulse is in a range of 0.1 mJ/cm 2 to 50 mJ/cm 2 ,
wherein a pulse width of the beam of the light pulse is in a range of in the range of 0.001 nanoseconds to 0.1 nanoseconds.
11. The optical switch according to claim 9 , further comprising an optical waveguide to propagate a beam of a light pulse and a metamaterial based lens for focusing the beam of the light pulse below diffraction resolution limit.
12. The optical switch according to claim 9 , further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration.
13. The optical switch according to claim 9 , further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer.
14. The optical switch according to claim 9 , further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer.
15. The optical switch according to claim 9 , further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer.
16. The optical switch according to claim 9 , further comprising coupling with a wavelength converter.
17. The optical switch according to claim 16 , comprising: the wavelength converter, wherein the wavelength converter comprises As 2 S 3 chalcogenide material or two-dimensional (2-D) photonic crystals As 2 S 3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide.
18. The optical switch according to claim 16 , further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier.
19. An optical network processor system comprising:
an optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is partially parallel or substantially parallel to a section of the second optical waveguide, wherein both the section of the first optical waveguide and the section of the second optical waveguide comprise: an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide and a two-dimensional (2-D) material, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide; and
an optical add-drop subsystem, wherein the optical add-drop subsystem comprises: a wavelength multiplexer and a wavelength demultiplexer,
wherein the optical switch is optically coupled with the optical add-drop subsystem.
20. The optical network processor system according to claim 19 , further comprising: a wavelength converter.