IP Library Granted Patent US 11,555,245
Granted Patent B2
US 11,555,245 · App. 15/737,138 · Granted Jan 17, 2023

Metal oxide film formation method

Inventors: Takahiro Hiramatsu (Tokyo, JP); Hiroyuki Orita (Tokyo, JP); Toshiyuki Kawaharamura (Kochi, JP); Shizuo Fujita (Kyoto, JP); Takayuki Uchida (Kyoto, JP)
Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation; Kyoto University; Kochi Prefectural Public University Corporation
C23C16/45574C23C14/0021C23C14/081C23C16/403C23C16/44C23C16/448C23C16/45514C23C26/00H01L21/31H01L31/02167Y02E10/50
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Quick Facts
Patent No.
US 11,555,245
App. No.
15/737,138
Granted
Jan 17, 2023
Kind
B2
Abstract

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

Claims (14)

1. A metal oxide film formation method, comprising:

(a) turning a raw-material solution including a metallic element into a mist, to obtain a raw-material solution mist, in a first vessel;

(b) turning a reaction aiding solution including a reaction aiding agent into a mist, to obtain an aiding-agent mist, in a second vessel provided independently of said first vessel, the reaction aiding agent aiding in an oxidation of said metallic element; and

(c) feeding said raw-material solution mist and said aiding-agent mist via first and second paths provided independently of each other, into a reactor vessel while heating a substrate placed in said reactor vessel, to form a metal oxide film including said metallic element on one main surface of said substrate, wherein

said reaction aiding solution is a solution including one of ammonia and a hydrochloric acid, and

said raw-material solution mist and said aiding-agent mist are not mixed before reaching said reaction vessel,

wherein

said reactor vessel includes a nozzle, and

said feeding (c) includes:

(c-1) feeding said raw-material solution mist and said aiding-agent mist to said nozzle via said first and second paths;

(c-2) mixing said raw-material solution mist and said aiding-agent mist in said nozzle, to obtain a mixed mist; and

(c-3) feeding said mixed mist onto said one main surface of said substrate.

2. The method according to claim 1 , wherein said metallic element is aluminum.

3. The method according to claim 2 , wherein the metal oxide film is an aluminum oxide film.

Assignments (2)
CHANGE OF NAME Recorded Apr 26, 2024
From: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
To: TMEIC CORPORATION
Reel/Frame 067244/0359 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2017
From: HIRAMATSU, TAKAHIRO; ORITA, HIROYUKI; KAWAHARAMURA, TOSHIYUKI; FUJITA, SHIZUO; UCHIDA, TAKAYUKI
To: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION; KYOTO UNIVERSITY; KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATION
Reel/Frame 044410/0044 →
Continuity (1)
Related Publication 20180155837A1 · Jun 7, 2018