Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method
View Patent ↗A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.
1. A semiconductor device comprising:
a metal body;
a bonding layer placed on the metal body; and
a semiconductor chip placed on the bonding layer,
wherein the bonding layer includes:
a first layer that contains a filler and is formed between the metal body and the semiconductor chip, and
a second layer bonded to the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer and a thickness of the second layer is half as large as that of the first layer or less.
2. A semiconductor device comprising:
a metal body;
a bonding layer placed on the metal body; and
a semiconductor chip placed on the bonding layer,
wherein the bonding layer includes:
a first layer that contains a filler and is formed between the metal body and the semiconductor chip, wherein a main component of the first layer is a material whose specific weight is larger than that of the filler, and
a second layer bonded to the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer.
3. A semiconductor device comprising:
a metal body;
a bonding layer placed on the metal body; and
a semiconductor chip placed on the bonding layer,
wherein the bonding layer includes:
a first layer that contains a filler and is formed between the metal body and the semiconductor chip, wherein surface irregularities are formed on an interface side of the first layer due to protrusion of the filler therefrom, and
a second layer bonded to the interface side of the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer, and the second layer covers the surface irregularities on the first layer.
4. The semiconductor device according to claim 1 , wherein
a main component of each of the first layer and the second layer is glass.
5. The semiconductor device according to claim 4 , wherein
the main component of the second layer is glass with a melting temperature lower than that of the main component of the first layer.
6. The semiconductor device according to claim 1 , wherein
the bonding layer further includes a third layer between the first layer and the metal body, the third layer having a thermal expansion coefficient higher than that of the first layer.
7. The semiconductor device according to claim 1 , wherein
the semiconductor chip includes a sensor element.
8. A mechanical quantity measuring device comprising
the semiconductor device of claim 1 , wherein the semiconductor chip includes a strain detector.
9. The semiconductor device according to claim 2 , wherein
a main component of each of the first layer and the second layer is glass.
10. The semiconductor device according to claim 9 , wherein
the main component of the second layer is glass with a melting temperature lower than that of the main component of the first layer.
11. The semiconductor device according to claim 2 , wherein
the bonding layer further includes a third layer between the first layer and the metal body, the third layer having a thermal expansion coefficient higher than that of the first layer.
12. The semiconductor device according to claim 2 , wherein
the semiconductor chip includes a sensor element.
13. A mechanical quantity measuring device comprising
the semiconductor device of claim 2 , wherein the semiconductor chip includes a strain detector.
14. The semiconductor device according to claim 3 , wherein
a main component of each of the first layer and the second layer is glass.
15. The semiconductor device according to claim 14 , wherein
the main component of the second layer is glass with a melting temperature lower than that of the main component of the first layer.
16. The semiconductor device according to claim 3 , wherein
the bonding layer further includes a third layer between the first layer and the metal body, the third layer having a thermal expansion coefficient higher than that of the first layer.
17. The semiconductor device according to claim 3 , wherein
the semiconductor chip includes a sensor element.
18. A mechanical quantity measuring device comprising
the semiconductor device of claim 3 , wherein the semiconductor chip includes a strain detector.