Ceramic metal circuit board and semiconductor device using the same
The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.
1. A ceramic metal circuit board comprising:
a ceramic substrate; and
first and second metal plates bonded to first and second opposite surfaces, respectively, of the ceramic substrate through respective bonding layers, the first and second metal plates each being made of a material selected from the group consisting of copper and a copper alloy;
a metal film on a surface of the first metal plate that is opposite the ceramic substrate; and
at least a part of a surface of the second metal plate that is opposite the ceramic substrate is not provided with the metal film; and
a semiconductor element or a metal terminal mounted to the at least a part of the surface of the second metal plate that is provided with no metal film with lead-free solder, wherein:
the maximum height surface roughness Rz of the surface of the first metal plate, the second metal plate, or both, that is provided with the metal film is 1.5 μm or less,
a thickness of the metal film is 10 μm or less on average,
average crystal grain sizes of the first metal plate and the second metal plate each is 200 μm or more, and
one of the metal plates on which the metal film is provided includes a recrystallized structure.
2. The ceramic metal circuit board according to claim 1 , wherein a protruding portion is formed as a portion of each of the bonding layers in such a manner that the each of bonding layers protrudes from a side surface of each of the metal plates.
3. The ceramic metal circuit board according to claim 1 , wherein the bonding layers contain at least one element selected from Ag, Cu, and Al.
4. The ceramic metal circuit board according to claim 1 , wherein the metal film is formed in such a manner that the metal film covers respective side surfaces of the metal plates and the protruding portion.
5. The ceramic metal circuit board according to claim 1 , wherein the metal film is one selected from nickel, gold, or an alloy containing the nickel and the gold as main components.
6. The ceramic metal circuit board according to claim 1 , wherein the ceramic substrate is one selected from a silicon nitride substrate, an aluminum nitride substrate, and an aluminum oxide substrate.
7. The ceramic metal circuit board according to claim 1 , wherein a metal terminal is bonded to such a position on a surface of one metal plate where the metal film is not provided.
8. A semiconductor device which is configured by mounting a semiconductor element on the ceramic metal circuit board according to claim 1 .
9. The semiconductor device according to claim 8 , wherein the semiconductor element is mounted through a solder layer on a position of a surface of a metal plate where the metal film is not provided.
10. The ceramic metal circuit board according to claim 1 , wherein the bonding layers contain at least one selected from Ag, Cu, and A1; and one of the metal plates on which the metal film is provided includes a recrystallized structure.
11. The ceramic metal circuit board according to claim 1 , wherein the metal plate is a copper plate.
12. The ceramic metal circuit board according to claim 1 , wherein the metal plate has a thickness of 0.20 mm or more.
13. The ceramic metal circuit board according to claim 1 , wherein the thickness of the metal film is 5 μm or less on average.
14. The ceramic metal circuit board according to claim 1 , wherein the ceramic substrate is one selected from a silicon nitride substrate, the bonding layers contain at least one element selected from Ag, Cu, and Al, and the metal plate is a copper plate.
15. The ceramic metal circuit board according to claim 1 , wherein the ceramic substrate is one selected from a silicon nitride substrate, the bonding layers contain at least one element selected from Ag, Cu, and Al, the metal plate is a copper plate, and the metal plate has a thickness of 0.20 mm or more.
16. The semiconductor device according to claim 8 , wherein the ceramic substrate is one selected from a silicon nitride substrate, the bonding layers contain at least one element selected from Ag, Cu, and Al, the metal plate is a copper plate, and the metal plate has a thickness of 0.20 mm or more.