Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component
View Patent ↗An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
1. An optoelectronic semiconductor component comprising:
a light-emitting semiconductor body having a radiation side,
a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers the radiation side, wherein the current expansion layer includes a transparent material that is electrically conductive and transparent to the light radiated by the semiconductor body and particles of a further material, and the particles of the further material are distributed homogenously within the current expansion layer, and
an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
2. The optoelectronic semiconductor component according to claim 1 , wherein the particles of the further material have a refractive index n3, which is different from a refractive index n1 of the transparent material.
3. The optoelectronic semiconductor component according to claim 1 , wherein the refractive index n3 of the particles of the further material is higher than the refractive index n1 of the transparent material.
4. The optoelectronic semiconductor component according to claim 1 , wherein the particles of the further material include TiO 2 .
5. The optoelectronic semiconductor component according to claim 1 , wherein the transparent material includes a transparent conductive oxide.
6. The optoelectronic semiconductor component according to claim 1 , wherein the current expansion layer has an average refractive index n2 of equal to or higher than 2.
7. The optoelectronic semiconductor component according to claim 1 , wherein the electrical contact is at least in part formed as a contact web.
8. The optoelectronic semiconductor component according to claim 1 , wherein a further layer is arranged between the current expansion layer and the semiconductor body, which includes a further transparent conductive material and is free of the particles of the further material.
9. The optoelectronic semiconductor component according to claim 1 , wherein the semiconductor component includes a sapphire substrate.
10. A method of producing an optoelectronic semiconductor component comprising:
providing a light-emitting semiconductor body,
producing a current expansion layer by simultaneously applying an electrically-conductive material transparent to light radiated by the semiconductor body and particles of a further material, on a radiation side of the semiconductor body, wherein the current expansion layer at least partially covers the radiation side of the semiconductor body and the particles of the further material are homogenously distributed within the current expansion layer, and
arranging an electrical contact on the current expansion layer.
11. The method according to claim 10 , wherein production of the current expansion layer is effected by simultaneous sputtering of the transparent material and the particles of the further material.
12. The method according to claim 10 , wherein content of the transparent material and content of the particles of the further material are adjusted to a predetermined value to set an average refractive index n2 of the current expansion layer.
13. An optoelectronic semiconductor component comprising:
a light-emitting semiconductor body having a radiation side,
a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers the radiation side, wherein the current expansion layer includes a transparent material that is electrically conductive and transparent to the light radiated by the semiconductor body and particles of a further material, and the particles of the further material are homogenously distributed within the current expansion layer, and
an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body, wherein
the transparent electrically-conductive material and the particles of the further material form a material composite,
the refractive index n3 of the particles of the further material is higher than the refractive index n1 of the transparent material, and
the particles of the further material include TiO 2 .