Copper crystal particles having a highly preferred orientation and a preparation method thereof
An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 μm in the long axis direction and a length of 20 nm to 2 μm in the short axis direction. A method of preparing the bamboo-like copper crystal particles is also disclosed.
1. A method of preparing bamboo-like copper crystal particles having a highly preferred orientation comprising:
providing a substrate;
conducting a direct current copper electroplating on the substrate in a copper plating solution at a plating current density of 3 to 30 A / dm 2 ; and
depositing the copper crystal particles on the substrate,
wherein the copper plating solution includes copper plating additives and a copper plating base solution;
wherein the copper base solution includes copper sulfate, sulfuric acid, and a trace amount of hydrochloric acid or sodium chloride, and the copper base solution has a concentration of copper ions of 40-60 g/L, a concentration of sulfate ions of 80-120 g/L, and a concentration of chloride ions of 40-60 ppm;
wherein the copper plating additives include an accelerator, a suppressor, and a non-dye leveler, the accelerator has a concentration of 3 to 5 mL / L, the suppressor has a concentration of 5 to 15 mL / L, and the non-dye leveler has a concentration of 25 to 35 mL/L; and
wherein the non-dye leveler is
2. The method of claim 1 , wherein the accelerator is sodium lauryl sulfate or an organosulfate having formula (II):
in formula (II), X is O or S; n is 1 to 6; M is hydrogen, alkali metal, or ammonium; R 1 is an alkylene, cyclic alkylene group of 1 to 8 carbon atoms, or an aromatic hydrocarbon of 6 to 12 carbon atoms; and R 2 is MO 3 SR 1 .
3. The method of claim 2 , wherein the organosulfate having formula (II) is disodium 3,3-dithiobispropane-sulphonate or 3, 3′-dithiobispropanesulfonic acid.
4. The method of claim 1 , wherein the suppressor is polyethylene glycol, 2-mercaptoethanol, polypropylene ether, or poly N,N′-diethylsaphranin.