Optoelectronic component with electrically-conductive adhesive layer including titanium oxide and method for producing the optoelectronic component

1. An optoelectronic component, including

a semiconductor layer sequence with an active layer, which is configured to emit electromagnetic radiation during operation of the component,

at least one current expansion layer on a radiation exit surface of the semiconductor layer sequence, wherein the current expansion layer is electrically-conductively connected to a contact structure via an adhesive layer and the adhesive layer includes a titanium oxide, wherein the oxygen in the titanium oxide has the oxidation state W 0 with W 0 =−2 and the titanium has the oxidation state W T with 0<W T <+4, wherein

the contact structure comprises one or multiple metals,

the current expansion layer consists of a transparent, electrically conductive oxide, and

the adhesive layer is in direct contact with the contact structure and the current expansion layer.

2. The component according to claim 1 , wherein the adhesive layer is electrically conductive.

3. The component according to claim 1 , wherein the titanium oxide is selected from a group which includes titanium oxides with titanium in the oxidation state W T =+3 or +2, titanium suboxides and combinations thereof.

4. The component according to claim 3 , wherein the titanium suboxides have the formula Ti n O 2n−1 with n =3-10.

5. The component according to claim 1 , wherein the titanium oxide is selected from a group including Ti 2 O 3 , Ti 2 O, Ti 3 O, Ti 6 O, Ti 3 O 5 , Ti 4 O 7 , Ti 5 O 9 , Ti 6 O 11 , Ti 7 O 13 , Ti 8 O 15 , Ti 9 O 17 , Ti 10 O 19 , and combinations thereof.

6. The component according to claim 1 , wherein the adhesive layer consists of titanium oxide.

7. The component according to claim 1 , wherein the adhesive layer has a layer thickness of between 1 nm and 100 nm.

8. The component according to claim 1 , which includes a substrate of sapphire, onto which the semiconductor layer sequence is epitaxially grown.

9. The component according to claim 8 , which includes a reflective layer arranged on the surface of the substrate facing away from the semiconductor layer sequence.

10. A method for producing an optoelectronic component, including the method steps:

A) providing a semiconductor layer sequence with an active layer configured to emit electromagnetic radiation during operation of the component;

B) applying a current expansion layer on to a radiation exit surface of the semiconductor layer sequence;

C) applying an adhesive layeron to the current expansion layer;

D) applying a contact structureon to the current expansion layer; wherein the method step C) includes the following method steps:

C1) vaporization of a titanium oxide, wherein the oxygen in the titanium oxide has the oxidation state W 0 with W 0 =−2 and the titanium has the oxidation state W T with 0<W T <+4, or

C1′) vaporization of titanium while supplying oxygen;

C3) depositing a titanium oxide for forming the adhesive layer (4), wherein the oxygen in the titanium oxide has the oxidation state W 0 with W 0 =−2 and the titanium has the oxidation state W T with 0<W T <+4,

wherein the adhesive layer includes a titanium suboxide with the formula Ti 3 O or Ti 6 O or Ti n O 2n−1 with n=3-10.

11. The method according to claim 10 , which includes a further method step C2): C2) Oxidation of the titanium oxide.

12. An optoelectronic component, including

a semiconductor layer sequence with an active layer, which is configured to emit electromagnetic radiation during operation of the component,

at least one current expansion layer on a radiation exit surface of the semiconductor layer sequence, wherein the current expansion layer is electrically-conductively connected to a contact structure via an adhesive layer and the adhesive layer includes a titanium suboxide with the formula Ti 3 O or Ti 6 O or Ti n O 2n−1 with n=3-10.