Light-emitting device and light-emitting device package comprising same
An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductor layer, second conductive semiconductor layer and active layer and is disposed on a part of an area of the insulating layer.
1. A light-emitting device comprising:
a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and further comprising a plurality of first recesses configured to penetrate the second conductive semiconductor layer and the active layer and be located in a portion of the first conductive semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer inside each of the plurality of first recesses;
a conductive support substrate electrically connected to the first electrode;
a second electrode electrically connected to the second conductive semiconductor layer; and
an insulating layer disposed between the conductive support substrate and the second conductive semiconductor layer,
wherein a second recess penetrates the first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer and is located in a portion of the insulating layer,
wherein the second recess comprises:
a light-extractor lower-surface portion configured to form a lower surface of the second recess;
a first light-extractor side-surface portion configured to form one side surface of the second recess; and
a second light-extractor side-surface portion configured to form a remaining side surface of the second recess, and
wherein the first light-extractor side-surface portion is disposed to have a first angle with the insulating layer for preventing light generated in the active layer from being again absorbed into the second light-extractor side-surface portion.
2. The device according to claim 1 , wherein the insulating layer is disposed so as to extend around the first recesses.
3. The device according to claim 1 , wherein the light-extractor lower-surface portion is the insulating layer.
4. The device according to claim 3 , wherein the light-extractor lower-surface portion is disposed to have a first width for extracting light generated in the active layer.
5. The device according to claim 4 , wherein the first width is equal to or greater than 3 μm.
6. The device according to claim 1 , wherein the first angle is equal to or less than 80 degrees.
7. The device according to claim 1 , wherein a third width of a surface of each first recess is smaller than a second width of an area in which the first recess is in contact with the first electrode.
8. The device according to claim 1 , wherein the light-emitting structure emits light within a UV-B or UV-C wavelength range.
9. The device according to claim 1 , wherein, in the first conductive semiconductor layer or the second conductive semiconductor layer, a composition rate of aluminum (Al) is equal to or greater than 40%.
10. A light-emitting device comprising:
a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and further comprising a plurality of first recesses configured to penetrate the second conductive semiconductor layer and the active layer and be located in a portion of the first conductive semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer inside each of the plurality of first recesses;
a conductive support substrate electrically connected to the first electrode;
a second electrode electrically connected to the second conductive semiconductor layer; and
an insulating layer disposed between the conductive support substrate and the second conductive semiconductor layer,
wherein a second recess penetrates the first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer and is located in a portion of the insulating layer,
wherein the second recess comprises a light-extractor lower-surface portion configured to form a lower surface of the second recess, a first light-extractor side-surface portion configured to form one side surface of the second recess, and a second light-extractor side-surface portion configured to form a remaining side surface of the second recess,
wherein the light-extractor lower-surface portion has a first width for extracting light generated in the active layer, and the first width is equal to or greater than 3 μm, and
wherein a third width of a surface of each first recess is smaller than a second width of an area in which the first recess is in contact with the first electrode.
11. A light-emitting device package comprising:
a conductive substrate provided with a cavity; and
a light-emitting device disposed so that at least a portion thereof is inserted into the cavity in the conductive substrate,
wherein the light-emitting device comprises:
a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and further comprising a plurality of first recesses configured to penetrate the second conductive semiconductor layer and the active layer and be located in a portion of the first conductive semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer inside each of the plurality of first recesses;
a conductive support substrate electrically connected to the first electrode;
a second electrode electrically connected to the second conductive semiconductor layer; and
an insulating layer disposed between the conductive support substrate and the second conductive semiconductor layer,
wherein a second recess penetrates the first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer and is located in a portion of the insulating layer,
wherein the second recess comprises:
a light-extractor lower-surface portion configured to form a lower surface of the second recess;
a first light-extractor side-surface portion configured to form one side surface of the second recess; and
a second light-extractor side-surface portion configured to form a remaining side surface of the second recess, and
wherein the first light-extractor side-surface portion is disposed to have a first angle with the insulating layer for preventing light generated in the active layer from being again absorbed into the second light-extractor side-surface portion.
12. The package according to claim 11 , wherein the light-extractor lower-surface portion is the insulating layer.
13. The package according to claim 12 , wherein the light-extractor lower-surface portion is disposed to have a first width for extracting light generated in the active layer.
14. The package according to claim 13 , wherein the first width is equal to or greater than 3 μm.
15. The package according to claim 11 , wherein the first angle is equal to or less than 80 degrees.
16. The package according to claim 11 , wherein, in the first conductive semiconductor layer or the second conductive semiconductor layer, a composition rate of aluminum (Al) is equal to or greater than 40%.
17. The device according to claim 10 , wherein the light-emitting structure emits light within a UV-B or UV-C wavelength range.
18. The device according to claim 10 , wherein in the first conductive semiconductor layer or the second conductive semiconductor layer, a composition rate of aluminum (Al) is equal to or greater than 40%.
19. The device according to claim 11 , wherein in the first conductive semiconductor layer or the second conductive semiconductor layer, a composition rate of aluminum (Al) is equal to or greater than 40%.
20. The device according to claim 1 , wherein a roughness is formed on at least one of an upper surface of the second conductive semiconductor layer, the first light-extractor side-surface portion and the second light-extractor side-surface portion.