Semiconductor device, semiconductor integrated circuit, and load driving device
On a transistor layer having arranged thereon multiple transistors each including a drain, a source, and a gate, metal interconnection layers serving as input side interconnection layers connected to the drains of the respective transistors and metal interconnection layers serving as output side interconnection layers connected to the sources of the respective transistors are arranged in parallel. Also provided are a plurality of through holes connecting the metal interconnection layers serving as input side interconnection layers to the drains of the respective transistors and connecting the metal interconnection layers serving as output side interconnection layers to the sources of the respective transistors. Resistance values of the plurality of through holes are changed along an arranging direction of the input side interconnection layers and the output side interconnection layers. Accordingly, current densities of the transistors arranged to be distributed in a two-dimensional manner can be uniform.
1. A semiconductor device comprising:
a transistor layer having arranged thereon in a two-dimensional manner a plurality of transistors each including an input unit, an output unit, and a control unit;
a plurality of interconnection layers configured to electrically connect the input units of the plurality of transistors to an input terminal and electrically connect the output units of the plurality of transistors to an output terminal; and
a plurality of interlayer connection conductors respectively connecting the plurality of interconnection layers to the transistor layer,
wherein the plurality of interconnection layers include a first interconnection layer having arranged therein along a predetermined arranging direction at least one input side interconnection layer connected to the input terminal and at least one output side interconnection layer connected to the output terminal, and
wherein resistance values of the plurality of interlayer connection conductors differ from each other depending on a position in the arranging direction.
2. The semiconductor device according to claim 1 , wherein the plurality of interconnection layers include the first interconnection layer and a second interconnection layer provided further on a side of the transistor layer than the first interconnection layer,
wherein the plurality of interlayer connection conductors include a plurality of first interlayer connection conductors connecting the second interconnection layer to the input units and the output units of the plurality of transistors, and
wherein resistance values of the plurality of first interlayer connection conductors differ from each other depending on a position in the arranging direction.
3. The semiconductor device according to claim 2 , wherein the resistance values of the plurality of first interlayer connection conductors change at least based on an interconnection length of the second interconnection layer.
4. The semiconductor device according to claim 3 , wherein the plurality of interlayer connection conductors include the plurality of first interlayer connection conductors and a second interlayer connection conductor connecting the first interconnection layer to the second interconnection layer, and
wherein an interconnection length of the second interconnection layer has a start point at a position of the second interlayer connection conductor.
5. The semiconductor device according to claim 2 , wherein a resistance value of the first interlayer connection conductor is higher as the first interlayer connection conductor is closer to a boundary between the input side interconnection layer and the output side interconnection layer.
6. The semiconductor device according to claim 2 , wherein, in the first interconnection layer, the two input side interconnection layers and the one output side interconnection layer, or the one input side interconnection layer and the two output side interconnection layers, are alternately arranged along the arranging direction, and
wherein a resistance value of the first interlayer connection conductor is lower as the first interlayer connection conductor is closer to a center line perpendicular to the arranging direction in the one output side interconnection layer arranged between the two input side interconnection layers or a center line perpendicular to the arranging direction in the one input side interconnection layer arranged between the two output side interconnection layers.
7. The semiconductor device according to claim 2 , wherein each of the plurality of first interlayer connection conductors is constituted by a plurality of connection conductors, and
wherein a resistance value of each of the plurality of first interlayer connection conductors changes depending on a distribution density of the connection conductors constituting each of the first interlayer connection conductors.
8. The semiconductor device according to claim 2 , wherein interconnection resistance of the first interconnection layer is lower than interconnection resistance of the second interconnection layer.
9. A semiconductor integrated circuit in which the at least one semiconductor device according to claim 1 is implemented on a same semiconductor chip.
10. A load driving device using the semiconductor device according to claim 1 as a switching element and applying voltage to a control unit of the switching element to drive a load connected to the switching element.