Double perovskite
The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B I ]; (iii) one or more trications [B III ]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B I ] selected from Cu + , Ag + and Au + ; (iii) one or more trications [B III ]; and (iv) one or more halide anions [X].
1. A semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising:
(i) one or more first monocations [A];
(ii) one or more second monocations [B I ] selected from Cu + , Ag + , Au + and Hg + ;
(iii) one or more trications [B III ] selected from Bi 3+ and Sb 3+ ; and
(iv) one or more halide anions [X],
and wherein:
the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbF 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbF 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbF 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 CuBiI 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 CuSbI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 CuBiBr 6 , (CH 3 NH 3 ) 2 AgSbBr 6 , (CH 3 NH 3 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 CuSbBr 6 , (CH 3 NH 3 ) 2 AgBiCl 6 , (CH 3 NH 3 ) 2 AuBiCl 6 , (CH 3 NH 3 ) 2 CuBiCl 6 , (CH 3 NH 3 ) 2 AgSbCl 6 , (CH 3 NH 3 ) 2 AuSbCl 6 , (CH 3 NH 3 ) 2 CuSbCl 6 , (CH 3 NH 3 ) 2 AgBiF 6 , (CH 3 NH 3 ) 2 AuBiF 6 , (CH 3 NH 3 ) 2 CuBiF 6 , (CH 3 NH 3 ) 2 AgSbF 6 , (CH 3 NH 3 ) 2 AuSbF 6 , (CH 3 NH 3 ) 2 CuSbF 6 , Cs 2 ABiI 6 , Cs 2 AuBiI 6 , Cs 2 CuBiI 6 , Cs 2 AgSbI 6 , Cs 2 AuSbI 6 , Cs 2 CuSbI 6 , Cs 2 AgBiBr 6 , Cs 2 AuBiBr 6 , Cs 2 CuBiBr 6 , Cs 2 AgSbBr 6 , Cs 2 AuSbBr 6 , Cs 2 CuSbBr 6 , Cs 2 AgBiCl 6 , Cs 2 AuBiCl 6 , Cs 2 CuBiCl 6 , Cs 2 AgSbCl 6 , Cs 2 AuSbCl 6 , Cs 2 CuSbI 6 , Cs 2 AgBiF 6 , Cs 2 AuBiF 6 , Cs 2 CuBiF 6 , Cs 2 AgSbF 6 , Cs 2 AuSbF 6 or Cs 2 CuSbF 6 ; or
the compound is a layered double perovskite compound of formula (II):
[A] 4 [B I ][B III ][X] 8 (II);
wherein:
[A] is the one or more first monocations;
[B I ] is the one or more second monocations;
[B III ] is the one or more trications; and
[X] is the one or more halide anions; or
the compound is a double perovskite compound of formula (Iza) or a layered double perovskite compound of formula (IIza):
[A] 2 [B I ] 0.5 Pb[B III ] 0.5 [X] 6 (Iza);
[A] 4 [B I ] 0.5 Pb[B III ] 0.5 [X] 8 (IIza);
wherein
[A] is the one or more first monocations;
[B I ] is the one or more second monocations;
[B III ] is the one or more trications; and
[X] is the one or more halide anions.
2. A semiconductor device according to claim 1 , wherein the one or more second monocations [B I ] are selected from Ag + and Au + .
3. A semiconductor device according to claim 1 , wherein the one or more trications [B III ] comprise Bi 3+ .
4. A semiconductor device according to claim 1 , wherein the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 AgSbBr 6 or (CH 3 NH 3 ) 2 AuSbBr 6 .
5. A semiconductor device according to claim 1 , wherein the compound is Cs 2 AgBiCl 6 .
6. A semiconductor device as defined in claim 1 , wherein the compound is (R 1 NH 3 ) 4 AgBiI 8 , (R 1 NH 3 ) 4 AuBiI 8 , (R 1 NH 3 ) 4 CuBiI 8 , (R 1 NH 3 ) 4 AgSbI 8 , (R 1 NH 3 ) 4 AuSbI 8 , (R 1 NH 3 ) 4 CuSbI 8 , (R 1 NH 3 ) 4 AgBiBr 8 , (R 1 NH 3 ) 4 AuBiBr 8 , (R 1 NH 3 ) 4 CuBiBr 8 , (R 1 NH 3 ) 4 AgSbBr 8 , (R 1 NH 3 ) 4 AuSbBr 8 , (R 1 NH 3 ) 4 CuSbBr 8 , (R 1 NH 3 ) 4 AgBiCl 8 , (R 1 NH 3 ) 4 AuBiCl 8 , (R 1 NH 3 ) 4 CuBiCl 8 , (R 1 NH 3 ) 4 AgSbCl 8 , (R 1 NH 3 ) 4 AuSbCl 8 , (R 1 NH 3 ) 4 CuSbCl 8 , (R 1 NH 3 ) 4 AgBiF 8 , (R 1 NH 3 ) 4 AuBiF 8 , (R 1 NH 3 ) 4 CuBiF 8 , (R 1 NH 3 ) 4 AgSbF 8 , (R 1 NH 3 ) 4 AuSbF 8 or (R 1 NH 3 ) 4 CuSbF 8 ,
wherein R 1 is an unsubstituted C 3-12 alkyl group.
7. A semiconductor device according to claim 1 , wherein the semiconductor device is a photovoltaic device.
8. A semiconductor device according to claim 1 , which semiconductor device comprises a layer of the semiconducting material.
9. A semiconductor device according to claim 1 , which semiconductor device comprises:
an n-type region comprising at least one n-type layer;
a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region:
a layer of the semiconducting material.
10. A semiconductor device according to claim 1 , which semiconductor device comprises a layer of said semiconducting material without open porosity.
11. A semiconductor device according to claim 9 , wherein the layer of the semiconducting material forms a planar heterojunction with the n-type region or the p-type region, or wherein the layer of the semiconducting material forms a first planar heterojunction with the n-type region and a second planar heterojunction with the p-type region.
12. A semiconductor device according to claim 1 , wherein the semiconductor device comprises:
an n-type region comprising at least one n-type layer;
a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region:
(i) a porous scaffold material; and
(ii) said semiconducting material in contact with the scaffold material.
13. A semiconductor device according to claim 9 , wherein the n-type region comprises a compact layer of an n-type semiconductor, or wherein the p-type region comprises a layer of an organic p-type semiconductor.
14. A semiconductor device according to claim 1 , wherein said semiconducting material is a photoactive material.
15. A semiconductor device according to claim 8 , wherein the layer of the semiconducting material has a thickness of from 5 nm to 1000 nm.
16. A process for producing a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising:
(i) one or more first monocations [A];
(ii) one or more second monocations [B I ] selected from selected from Cu + , Ag + , Au + and Hg + ;
(iii) one or more trications [B III ] selected from Bi 3+ and Sb 3+ ; and
(iv) one or more halide anions [X],
which process comprises:
(a) disposing a second region on a first region, which second region comprises a layer of said semiconducting material
and wherein:
the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbC 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbF 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbF 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbF 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 CuBiI 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 CuSbI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 CuBiBr 6 , (CH 3 NH 3 ) 2 AgSbBr 6 , (CH 3 NH 3 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 CuSbBr 6 , (CH 3 NH 3 ) 2 AgBiCl 6 , (CH 3 NH 3 ) 2 AuBiCl 6 , (CH 3 NH 3 ) 2 CuBiCl 6 , (CH 3 NH 3 ) 2 AgSbCl 6 , (CH 3 NH 3 ) 2 AuSbCl 6 , (CH 3 NH 3 ) 2 CuSbCl 6 , (CH 3 NH 3 ) 2 AgBiF 6 , (CH 3 NH 3 ) 2 AuBiF 6 , (CH 3 NH 3 ) 2 CuBiF 6 , (CH 3 NH 3 ) 2 AgSbF 6 , (CH 3 NH 3 ) 2 AuSbF 6 , (CH 3 NH 3 ) 2 CuSbF 6 , Cs 2 ABiI 6 , Cs 2 AuBiI 6 , Cs 2 CuBiI 6 , Cs 2 AgSbI 6 , Cs 2 AuSbI 6 , Cs 2 CuSbI 6 , Cs 2 AgBiBr 6 , Cs 2 AuBiBr 6 , Cs 2 CuBiBr 6 , Cs 2 AgSbBr 6 , Cs 2 AuSbBr 6 , Cs 2 CuSbBr 6 , Cs 2 AgBiCl 6 , Cs 2 AuBiCl 6 , Cs 2 CuBiCl 6 , Cs 2 AgSbCl 6 , Cs 2 AuSbCl 6 , Cs 2 CuSbI 6 , Cs 2 AgBiF 6 , Cs 2 AuBiF 6 , Cs 2 CuBiF 6 , Cs 2 AgSbF 6 , Cs 2 AuSbF 6 or Cs 2 CuSbF 6 ; or
the compound is a layered double perovskite compound of formula (II):
[A] 4 [B I ][B III ][X] 8 (II);
wherein:
[A] is the one or more first monocations;
[B I ] is the one or more second monocations;
[B III ] is the one or more trications; and
[X] is the one or more halide anions: or
the compound is a double perovskite compound of formula (Iza) or a layered double perovskite compound of formula (IIza):
[A] 2 [B I ] 0.5 Pb[B III ] 0.5 [X] 6 (Iza);
[A] 4 [B I ] 0.5 Pb[B III ] 0.5 [X] 8 (IIza);
wherein
[A] is the one or more first monocations;
[B I ] is the one or more second monocations;
[B III ] is the one or more trications; and
[X] is the one or more halide anions.
17. A process according to claim 16 , wherein the process further comprises
(b) disposing a third region on the second region,
wherein:
said first region is an n-type region comprising at least one n-type layer and said third region is a p-type region comprising at least one p-type layer; or
said first region is a p-type region comprising at least one p-type layer and said third region is an n-type region comprising at least one n-type layer.
18. A process according to claim 16 , wherein (a) disposing a second region on a first region comprises:
(Ai) exposing the first region to vapour, which vapour comprises said semiconducting material or one or more reactants for producing said semiconducting material; and
(Aii) allowing deposition of the vapour onto the first region to produce a layer of said semiconducting material thereon; or
(Bi) disposing one or more precursor compositions on the first region, which one or more precursor compositions comprise: said semiconducting material and one or more solvents; or one or more reactants for producing said semiconducting material and one or more solvents; and
(Bii) removing the one or more solvents to produce on the first region a layer of said semiconducting material.
19. A process according to claim 16 , wherein the one or more reactants for producing the semiconducting material comprise one or more first precursor compounds, one or more second precursor compounds and one or more third precursor compounds,
which one or more first precursor compounds are selected from compounds of formula [A][X];
which one or more second precursor compounds are selected from compounds of formula [B I ][X]; and
which one or more second precursor compounds are selected from compounds of formula [B III ][X] 3 ;
wherein
[A] is the one or more first monocations;
[B I ] is the one or more second monocations;
[B III ] is the one or more trications; and
each [X] is the one or more halide anions.
20. A compound comprising:
(i) one or more first monocations [A];
(ii) one or more second monocations [B I ] selected from Cu + , Ag + and Au + ;
(iii) one or more trications [B III ] selected from Bi 3+ and Sb 3+ ; and
(iv) one or more halide anions [X],
and wherein:
the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbC 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbF 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbF 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbF 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 CuBiI 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 CuSbI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 CuBiBr 6 , (CH 3 NH 3 ) 2 AgSbBr 6 , (CH 3 NH 3 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 CuSbBr 6 , (CH 3 NH 3 ) 2 AgBiCl 6 , (CH 3 NH 3 ) 2 AuBiCl 6 , (CH 3 NH 3 ) 2 CuBiCl 6 , (CH 3 NH 3 ) 2 AgSbCl 6 , (CH 3 NH 3 ) 2 AuSbCl 6 , (CH 3 NH 3 ) 2 CuSbCl 6 , (CH 3 NH 3 ) 2 AgBiF 6 , (CH 3 NH 3 ) 2 AuBiF 6 , (CH 3 NH 3 ) 2 CuBiF 6 , (CH 3 NH 3 ) 2 AgSbF 6 , (CH 3 NH 3 ) 2 AuSbF 6 , (CH 3 NH 3 ) 2 CuSbF 6 , Cs 2 AgBiI 6 , Cs 2 AuBiI 6 , Cs 2 CuBiI 6 , Cs 2 AgSbI 6 , Cs 2 AuSbI 6 , Cs 2 CuSbI 6 , Cs 2 AgBiBr 6 , Cs 2 AuBiBr 6 , Cs 2 CuBiBr 6 , Cs 2 AgSbBr 6 , Cs 2 AuSbBr 6 , Cs 2 CuSbBr 6 , Cs 2 AgBiCl 16 , Cs 2 AuBiCl 16 , Cs 2 CuBiCl 16 , Cs 2 AgSbCl 6 , Cs 2 AuSbCl 6 , Cs 2 CuSbI 6 , Cs 2 AgBiF 6 , Cs 2 AuBiF 6 , Cs 2 CuBiF 6 , Cs 2 AgSbF 6 , Cs 2 AuSbF 6 or Cs 2 CuSbF 6 ; or
the compound is a layered double perovskite compound of formula (II):
[A] 4 [B I ][B III ][X] 8 (II);
wherein:
[A] is the one or more first monocations:
[B I ] is the one or more second monocations:
[B III ] is the one or more trications; and
[X] is the one or more halide anions; or
the compound is a double perovskite compound of formula (Iza) or a layered double perovskite compound of formula (IIza):
[A] 2 [B I ] 0.5 Pb[B III ] 0.5 [X] 6 (Iza);
[A] 4 [B I ] 0.5 Pb[B III ] 0.5 [X] 8 (IIza);
wherein
[A] is the one or more first monocations;
[B I ] is the one or more second monocations:
[B III ] is the one or more trications; and
[X] is the one or more halide anions.
21. A compound according to claim 20 , wherein the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 AgSbBr 6 or (CH 3 NH 3 ) 2 AuSbBr 6 .
22. A compound according to claim 20 , wherein the compound is Cs 2 AgBiCl 6 .