Component and metod for producing a component
A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body.
1. A component comprising:
a carrier comprising a first through-contact and a second through-contact laterally spaced apart from the first through-contact by an intermediate region;
a semiconductor body having a first semiconductor layer facing away from the carrier, a second semiconductor layer facing towards the carrier and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer is electrically conductively connected to the first through-contact and the second semiconductor layer is electrically conductively connected to the second through-contact; and
a stabilization layer arranged in a vertical direction between the semiconductor body and the carrier, wherein the stabilization layer is formed in a contiguous manner, wherein the stabilization layer in a plan view has overlaps with the first and second through-contacts and laterally bridges the intermediate region, and wherein the stabilization layer is electrically isolated from the first and second through-contacts and from the semiconductor body.
2. The component according to claim 1 , wherein the stabilization layer comprises a metal layer.
3. The component according to claim 1 , wherein the stabilization layer has a layer thickness of between 5 μm and 50 μm, inclusive.
4. The component according to claim 1 , wherein the stabilization layer has a first opening and a second opening, wherein the first through-contact extends through the first opening for electrically contacting the semiconductor body, and wherein the second through-contact extends through the second opening for electrically contacting the semiconductor body.
5. The component according to claim 1 , wherein the stabilization layer and the first and second through-contacts together cover at least 90% of a total area of the active layer.
6. The component according to claim 5 , wherein the stabilization layer and the first and second through-contacts together completely cover the active layer.
7. The component according to claim 1 , wherein the carrier comprises a mold body of an electrically insulating material.
8. The component according to claim 6 , wherein the first and second through-contacts are embedded in regions in the mold body and extend through the mold body along the vertical direction.
9. The component according to claim 8 , wherein in lateral directions, the mold body of the carrier encloses the semiconductor body in regions.
10. The component according to claim 1 , further comprising a through-via that extends through the second semiconductor layer and the active layer for electrically contacting the first semiconductor layer, wherein the through-via is electrically conductively connected to the first through-contact or the second through-contact.
11. The component according to claim 1 , further comprising a mirror layer that is electrically conductively connected to the first through-contact or the second through-contact, wherein the mirror layer is arranged in the vertical direction between the carrier and the semiconductor body and is formed in such a way that it is covered on all side surfaces of the component.
12. The component according to claim 1 , wherein the stabilization layer is freely accessible on at least one side surface of the component.
13. The component according to claim 1 , further comprising an insulating structure that completely encloses the stabilization layer.
14. The component according to claim 1 , wherein the stabilization layer is a self-supporting layer of the component and has a vertical layer thickness between 5 μm and 50 μm.
15. The component according to claim 1 , wherein the stabilization layer is formed from an electrically conductive material.
16. The component according to claim 1 , wherein the stabilization layer is a metal layer which completely enclosed by an insulating structure of the component.
17. A method for producing a component comprising a semiconductor body, a carrier and a stabilization layer arranged between the semiconductor body and the carrier in a vertical direction, wherein
providing a semiconductor body having a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer;
forming a carrier on the semiconductor body such that first semiconductor layer faces away from the carrier and the second semiconductor layer faces toward the carrier, the carrier comprising a first through-contact and a second through-contact laterally spaced apart from the first through-contact by an intermediate region, wherein the first through-contact is electrically conductively connected to the first semiconductor layer and the second through-contact is electrically conductively connected to the second semiconductor layer; and
forming a stabilization layer in a contiguous manner, the stabilization layer in a plan view overlaps with the first and second through-contacts and laterally bridges the intermediate region, wherein the stabilization layer is electrically isolated from the first and second through-contacts and from the semiconductor body.
18. The method according to claim 17 , wherein the first and second through-contacts are applied on the semiconductor body by a galvanic coating method.
19. The method according to claim 17 , wherein the stabilization layer is applied on the semiconductor body by a galvanic coating method.
20. The method according to claim 17 , wherein the method produces a plurality of components;
wherein providing the semiconductor body comprises providing a wafer composite having a semiconductor body composite, a plurality of first through-contacts, a plurality of second through-contacts and a contiguous stabilization layer;
wherein the wafer composite comprises a plurality of separating trenches, through which the semiconductor body composite is severable into a plurality of semiconductor bodies;
wherein the method further comprises forming a mold body composite by applying a mold body material to the wafer composite in such a way that the separating trenches and intermediate regions between the first and second through-contacts are filled at least partially; and
wherein the method further comprises singulating the wafer composite and the mold body composite along the separating trenches into a plurality of components in such a manner that the components each have one of the semiconductor bodies, a stabilization layer and a carrier, wherein for each component the carrier has a first through-contact, a second through-contact and a mold body.