Semiconductor sensor device and method for manufacturing same
To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.
1. A semiconductor sensor device comprising:
a first thin film that is disposed on a sensor chip;
a second thin film that is formed on a pedestal, wherein
the first thin film and the second thin film are bonded at a normal temperature,
the pedestal includes a convex region formed by material removed from the pedestal surface within a thickness of an oxide film,
the oxide film includes an oxidized component contained in a base material of the pedestal, and
the convex region includes the oxide film being disposed thereon, the oxide film being regenerated on the pedestal surface after the material is removed.
2. The semiconductor sensor device according to claim 1 ,
wherein the pedestal is a stainless pressure receiving pedestal configured to detect a change in pressure.
3. The semiconductor sensor device according to claim 2 ,
wherein the sensor chip is a physical/mechanical sensor.
4. The semiconductor sensor device according to claim 1 ,
wherein the first and second thin films are made of any one or some of W, Al, Cr, Ni, Ti, Ta, Cu, Au, Pt, Fe, and Ag, or an alloy.
5. The semiconductor sensor device according to claim 4 ,
wherein the thicknesses of the first and second thin films are 0.1 nm to 1 μm.
6. The semiconductor sensor device according to claim 1 ,
wherein the sensor chip is electrically connected to a circuit board via a bonding wire.
7. A semiconductor sensor device manufacturing method comprising the steps of:
forming a first thin film on a sensor chip;
forming a second thin film on a pedestal to be bonded to the sensor chip; and
bonding the first thin film and the second thin film, wherein
the bonding step is bonding at a normal temperature, and
the bonding step comprises the steps of:
removing a convex region of the pedestal surface within a thickness of an oxide film generated by oxidizing a component contained in a base material of the pedestal; and
regenerating the oxide film on the pedestal surface after the removal step.
8. The semiconductor sensor device manufacturing method according to claim 7 ,
wherein a removal step of removing a convex region of a surface is performed within a thickness of a film regenerated in the film regenerations step after the film regeneration step.
9. The semiconductor sensor device manufacturing method according to claim 7 ,
wherein the film is a passive film or altered layer.
10. The semiconductor sensor device manufacturing method according to claim 7 ,
wherein the convex region is removed by use of ion beam.