Methods for depositing a conformal metal or metalloid silicon nitride film
Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
1. A method for depositing a conformal aluminum doped silicon nitride dielectric film via thermal atomic layer deposition, the method consisting of the following steps:
a. providing a substrate into a reactor;
b. introducing into the reactor an aluminum precursor consisting of trimethylaluminum (TMA) under process conditions sufficient to react the aluminum precursor and provide a chemisorbed layer comprising a deposition temperature between about 250° C. and about 300° C.;
c. purge to remove unreacted aluminum precursor;
d. introducing into the reactor a first nitrogen source to react with at least a portion of the chemisorbed layer and provide at least one reactive site, the first nitrogen source consisting of hydrazine;
e. purging the reactor with a purge gas;
f. introducing into the reactor an organoaminosilane precursor consisting of di-sec-butylaminosilane;
g. purging the reactor with a purge gas;
h. introducing a second nitrogen source into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site, the second nitrogen source consisting of hydrazine; and
i. optionally purge the reactor with an inert gas,
wherein the steps do not include plasma enhancement and wherein steps b. through i. are repeated to produce conformal aluminum doped silicon nitride dielectric film.
2. A method for depositing a conformal aluminum doped silicon nitride dielectric film via thermal atomic layer deposition, the method consisting of the steps of:
a. providing a substrate into a reactor;
b. introducing into the reactor an aluminum precursor comprising trimethylaluminum (TMA) under process conditions sufficient to react the aluminum precursor and provide a chemisorbed layer comprising a deposition temperature of about 400° C. or less;
c. purge to remove unreacted metal precursor;
d. introducing into the reactor a first nitrogen source consisting of hydrazine (N 2 H 4 );
e. purging the reactor with a purge gas;
f. introducing into the reactor an organoaminosilane precursor consisting of di-sec-butylaminosilane (DSBAS);
g. purging the reactor with a purge gas;
h. introducing a second nitrogen source consisting of hydrazine (N 2 H 2 ) into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site; and
i. optionally purge the reactor with an inert gas,
wherein steps b. through i. are repeated to create a supercycle, the supercycle defined by the formula: x(yTMA+z[DSBAS+N 2 H 4 ]),
wherein x is an integer number of supercycles, y is an integer number of TMA exposures that occur before SiNx growth, and z is an integer number of ALD cycles of DSBAS and N 2 H 4 ;
wherein the steps a.-i. do not include plasma enhancement and are performed to produce conformal aluminum doped silicon nitride dielectric film having a density of 2.2 to 3.0 g/cc.
3. The method of claim 2 , wherein the deposition temperature is between about 250° C. and about 300° C.
4. The method of claim 2 , wherein y is less than z.
5. The method of claim 2 , wherein z is more than 10 times y.