Wavelength converting material for a light emitting device
Embodiments of the invention include a luminescent structure including an InxZnyP core, wherein 0<y/x<10, and wherein the core comprises an alloy including both In and Zn, and a shell disposed on a surface of the core, wherein a difference between a lattice constant of the shell and a lattice constant of the core relative to the lattice constant of the shell is less than 1%.
1. A luminescent structure comprising:
an In x Zn y P core, wherein 0≤y/x<100, and wherein the In x Zn y P core comprises an alloy including both In and Zn; and
a shell disposed on a surface of the core, wherein a difference between a lattice constant of the shell and a lattice constant of the In x Zn y P core is less than 1.7% relative to the lattice constant of the shell.
2. The luminescent structure of claim 1 wherein 2≤y/x≤10.
3. The luminescent structure of claim 1 further comprising an intermediate layer disposed between the shell and the In x Zn y P core, wherein the intermediate layer comprises Ga.
4. The luminescent structure of claim 1 wherein the shell is lattice-matched to the In x Zn y P core.
5. The luminescent structure of claim 1 wherein the shell comprises ZnSe z S 1-z wherein z=0-1.
6. The luminescent structure of claim 5 wherein the shell further comprises GaP.
7. The luminescent structure of claim 1 wherein the shell comprises GaP.
8. The luminescent structure of claim 1 wherein InP and ZnP form an alloy.
9. The luminescent structure of claim 1 wherein the In x Zn y P core comprises Zn 2+ incorporated into the crystal lattice of an InP quantum dot.
10. The luminescent structure of claim 1 wherein the In x Zn y P core is zinc blende.
11. The luminescent structure of claim 1 wherein y and x are not both equal to 1.
12. The luminescent structure of claim 1 wherein the In x Zn y P core consists of an alloy consisting of In, Zn, and P.
13. A structure comprising:
a semiconductor light emitting device; and
a nanocrystal disposed in a path of light emitted by the light emitting device, the nanocrystal comprising:
an InZnP core consisting of an InZnP alloy; and
a shell disposed on a surface of the core, wherein a difference between a lattice constant of the shell and a lattice constant of the core is less than 1.7% relative to the lattice constant of the shell.
14. A method of forming a luminescent quantum dot material, the method comprising:
providing an In x Zn x P core, wherein 0≤y/x≤10, and wherein the In x Zn y P core comprises an alloy including both In and Zn,
surrounding the In x Zn y P core with a shell,
wherein a difference between a lattice constant of the shell and a lattice constant of the In x Zn y P core is less than 1.7% relative to the lattice constant of the shell.
15. The method of claim 14 further comprising determining a lattice constant of the shell material composition.
16. The method of claim 14 wherein the core material comprises a group 12 material, a group 13 material, and a group 15 material.
17. The method of claim 16 wherein the group 12 material, the group 13 material, and the group 15 material form an alloy, such that the composition in the core material is substantially uniform through the core material.
18. The method of claim 14 further comprising tuning the lattice constant of the core by adjusting the concentration of precursor ratio of In/Zn during synthesis of the core.