IP Library Granted Patent US 10,658,283
Granted Patent B2
US 10,658,283 · App. 15/773,673 · Granted May 19, 2020

Method for manufacturing a device with integrated-circuit chip by direct deposit of conductive material

Inventors: Line Degeilh (Gemenos, FR); Remy Janvrin (Gemenos, FR); Lucile Dossetto (Gemenos, FR); Alain Le Loc'h (Gemenos, FR); Jean-Christophe Fidalgo (Gemenos, FR)
Assignee: THALES DIS FRANCE SA
H01L23/49855G06K19/0723H01L21/4867G06K19/00H01L2224/49171
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Quick Facts
Patent No.
US 10,658,283
App. No.
15/773,673
Granted
May 19, 2020
Kind
B2
Abstract

The invention relates to a method for manufacturing a device with a secure integrated-circuit chip, said device having an insulating substrate, electrically conductive surfaces on the substrate, which surfaces are connected or coupled to said electronic chip, said electrically conductive surfaces being produced by a step of depositing or transferring conductive material; the method is characterised in that said step of depositing or transferring conductive material is carried out by a technique of directly depositing metal microparticles, which are free of polymer or solvent, onto the substrate, said deposit being obtained by coalescence of the microparticles forming at least one or more uniform cohesive layers that rest directly in contact with the substrate. The invention also relates to the device obtained.

Claims (22)

1. A method for manufacturing a device with a secure integrated-circuit chip, said device having an insulating substrate, electrically conductive surfaces on the insulating substrate electrically connected to said secure integrated-circuit chip, said electrically conductive surfaces being produced by a step of depositing or transferring conductive material, said secure integrated-circuit chip being directly soldered or brazed to the conductive material forming the electrically conductive surfaces,

wherein said step of depositing or transferring conductive material is carried out by a technique of directly depositing metal microparticles, which are free of polymer or solvent, onto the insulating substrate, said deposit being obtained by coalescence of the metal microparticles forming at least one or several uniform cohesive layer(s) that rest(s) directly in contact with the insulating substrate.

2. The method of claim 1 , wherein said conductive material has properties of suitability for soldering or brazing after it has been deposited or transferred.

3. The method of claim 1 , wherein it includes a step of producing at least one surface and/or at least one redirection track and/or at least one electrically conductive antenna on a module of single-sided type, said electrically conductive surfaces connecting an integrated-circuit chip via a soldered wire.

4. The method of claim 1 , wherein it includes a step of producing at least one surface and/or at least one redirection track and/or at least one electrically conductive antenna on a module of single-sided type, said electrically conductive surfaces connecting an integrated-circuit chip via a conductive glue.

5. The method of claim 1 , wherein it includes a step of producing at least one surface in a location of a plastic sheet intended to constitute the body of a smart card or an electronic passport.

6. The method of claim 1 , wherein it includes a step of depositing conductive material on metal surfaces.

7. The method of claim 1 , wherein it implements a continuous movement of a substrate strip receiving conductive material and a continuous masking strip to mask the receiving substrate.

8. The method of claim 1 , wherein it implements a synchronization of the stepwise movement of a substrate strip receiving conductive material and of a continuous masking strip T to mask the receiving substrate under a transfer head or laser.

9. The method of claim 1 , wherein it includes means for setting relative positions of masks with respect to areas to be covered with conductive material.

10. The method of claim 1 , wherein said electrically conductive surfaces define at least one conductive track or at least one antenna turn.

11. The method of claim 1 , wherein said conductive material is pure metal.

12. The method of claim 11 , wherein said pure metal has a purity higher than 95%.

13. The method of claim 1 , wherein said technique is chosen from among Fine-Powder Coating (FPC) and Laser-Induced Forward Transfer (LIFT) techniques.

14. The method of claim 13 , wherein it includes the following steps according to which direct deposition is carried out through a mask for the FPC technology.

15. A device with a secure integrated-circuit chip, said device comprising an insulating substrate, electrically conductive surfaces on the insulating substrate electrically connected to said secure integrated-circuit chip, said electrically conductive surfaces comprising conductive material, said secure integrated-circuit chip being directly soldered or brazed to the conductive material forming the electrically conductive surfaces,

wherein the conductive material comprises a deposit of metal microparticles coalesced on the insulating substrate and which are free of polymer or solvent, said deposit forming at least one or several uniform cohesive layers(s) that rest directly in contact with the insulating substrate.

16. The device with a secure integrated-circuit chip of claim 15 , wherein said electrically conductive surfaces define at least one conductive track or at least one antenna turn.

17. The device with a secure integrated-circuit chip of claim 15 , wherein said conductive material has properties of suitability for soldering or brazing after it has been deposited or transferred.

18. The device with a secure integrated-circuit chip of claim 17 , constituting a smart card module, an insert of a smart card body or a sheet of an electronic passport, said insulating substrate having a melting or softening temperature less than 100° C.

19. The device with a secure integrated-circuit chip of claim 15 , wherein said conductive material is pure metal.

20. The device with a secure integrated-circuit chip of claim 19 , wherein said pure metal has a purity higher than 95%.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2023
From: THALES DIS FRANCE SA
To: THALES DIS FRANCE SAS
Reel/Frame 064730/0238 →
CHANGE OF NAME Recorded Apr 10, 2020
From: GEMALTO SA
To: THALES DIS FRANCE SA
Reel/Frame 052371/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2018
From: DEGEILH, LINE; JANVRIN, REMY; DOSSETTO, LUCILE; LE LOC'H, ALAIN; FIDALGO, JEAN-CHRISTOPHE
To: GEMALTO SA
Reel/Frame 046660/0354 →