Organic electronic component and use of a fluorinated sulfonimide metal salt
An organic electronic component is disclosed. In an embodiment an organic electronic component includes at least one organic layer having a fluorinated sulfonimide metal salt of the following formula: wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, where 1≤n≤7, and wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.
1. An organic electronic component comprising:
at least one organic layer comprising a p-type dopant,
wherein the p-type dopant consists of a fluorinated sulfonimide metal salt of the following formula:
wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, wherein M is copper, zinc, aluminum, bismuth, potassium, rubidium, caesium or tin,
wherein 1≤n≤7,
wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical,
wherein the organic layer is hole-transporting and comprises a matrix material, and
wherein the p-type dopant acts as an electron acceptor in relation to the matrix material.
2. The organic electronic component according to claim 1 , wherein M=copper and n=2.
3. The organic electronic component according to claim 1 , wherein the matrix material is a hole-transport material.
4. The organic electronic component according to claim 1 , wherein the p-type dopant has a proportion of between 1% by volume and 30% by volume in the matrix material.
5. The organic electronic component according to claim 1 , wherein the matrix material is selected from the group consisting of HTM014, HTM081, HTM163, HTM222, NHT5, NHT49, NHT51, EL-301, EL-22T, HTM226, HTM355, HTM133, HTM334 and HTM604.
6. The organic electronic component according to claim 1 , wherein R 1 , R 2 are selected independently of one another from the group consisting of a linear or branched, at least partially fluorine-substituted alkyl radical having 1 to 10 carbon atoms, an at least partially fluorine-substituted aryl radical having 1 to 20 carbon atoms and an at least partially fluorine-substituted arylalkyl radical having 1 to 20 carbon atoms.
7. The organic electronic component according to claim 1 , wherein R 1 and R 2 are the same substituents and are selected from the following group:
8. The organic electronic component according to claim 1 , wherein the organic electronic component is an organic light-emitting diode.
9. The organic electronic component according to claim 1 , wherein the organic electronic component is a solar cell.
10. The organic electronic component according to claim 1 , wherein the organic layer is produced by co-deposition of the matrix material and the p-type dopant via physical vapour deposition.
11. The organic electronic component according to claim 1 , wherein the organic layer is produced by a wet-chemical method.
12. The organic electronic component according to claim 1 , wherein the organic layer is a charge carrier generation layer.
13. The organic electronic component according to claim 1 , wherein the organic electronic component is a photodetector.
14. The organic electronic component according to claim 1 , wherein the organic electronic component is an organic field-effect transistor.
15. An organic electronic component comprising:
at least one organic layer comprising a p-type dopant,
wherein the p-type dopant consists of a fluorinated sulfonimide metal salt of the following formula:
wherein M=copper and n=2, and
wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.
16. The organic electronic component according to claim 15 , wherein the organic layer is hole-transporting and comprises a matrix material, and wherein the p-type dopant acts as an electron acceptor in relation to the matrix material.
17. The organic electronic component according to claim 16 , wherein the p-type dopant has a proportion of between 1% by volume and 30% by volume in the matrix material.
18. An organic electronic component comprising:
at least one organic layer,
wherein the organic layer is a hole-injection layer and consists essentially of a fluorinated sulfonimide metal salt of the following formula:
wherein R 1 , R 2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical, and
wherein M=copper and n=2.
19. The organic electronic component according to claim 18 , wherein R 1 , R 2 are selected independently of one another from the group consisting of a linear or branched, at least partially fluorine-substituted alkyl radical having 1 to 10 carbon atoms, an at least partially fluorine-substituted aryl radical having 1 to 20 carbon atoms and an at least partially fluorine-substituted arylalkyl radical having 1 to 20 carbon atoms.
20. The organic electronic component according to claim 18 , wherein the organic electronic component is an organic light-emitting diode.