Radio-frequency loss reduction in photonic circuits
In photonic integrated circuits implemented in silicon-on-insulator substrates, non-conductive channels formed, in accordance with various embodiments, in the silicon device layer and/or the silicon handle of the substrate in regions underneath radio-frequency transmission lines of photonic devices can provide breaks in parasitic conductive layers of the substrate, thereby reducing radio-frequency substrate losses.
1. A photonic integrated circuit (PIC) comprising:
a silicon-on-insulator substrate comprising a silicon handle, a buried oxide layer disposed on top of the silicon handle, a silicon device layer disposed on top of the buried oxide layer, and a cladding layer disposed on top of the silicon device layer;
formed partially within at least one of the silicon device layer or the cladding layer, a first photonic device and one or more second photonic devices, the first photonic device comprising a transmission line having two or more electrodes disposed on top of the cladding layer, the two or more electrodes defining one or more gaps between pairs of adjacent ones of the electrodes; and
formed underneath the transmission line within at least one of the silicon handle or the silicon device layer, one or more nonconductive channels each extending throughout the silicon handle or silicon device layer to the buried oxide layer and laterally overlapping with one of the one or more gaps, the one or more nonconductive channels being confined to a region encompassing only the first photonic device.
2. The PIC of claim 1 , wherein the one or more nonconductive channel comprises one or more channels formed in the silicon device layer, each of the one or more channels in the silicon device layer laterally overlapping with one of the one or more gaps and not extending beyond outer edges of the pair of adjacent electrodes defining the respective gap.
3. The PIC of claim 2 , wherein the one or more channels in the silicon device layer do not laterally overlap with the electrodes defining the respective gaps.
4. The PIC of claim 2 , wherein the one or more channels in the silicon device layer are narrower than the respective gaps.
5. The PIC of claim 2 , wherein each of the one or more channels in the silicon device layer has a width less than one hundred micrometers.
6. The PIC of claim 2 , wherein the one or more channels in the silicon device layer comprise multiple channels formed underneath one of the one or more gaps.
7. The PIC of claim 6 , wherein the multiple channels result from periodic removal of material from the silicon device layer.
8. The PIC of claim 2 , wherein the one or more nonconductive channels further comprise one or more channels in the silicon handle.
9. The PIC of claim 2 , wherein the one or more channels in the silicon device layer are filled with a cladding material of the cladding layer.
10. The PIC of claim 1 , wherein the one or more channels are each filled with a nonconductive polymer or a dielectric material.
11. The PIC of claim 1 , wherein the transmission line comprises at least three electrodes defining at least two gaps between the electrodes.
12. The PIC of claim 11 , wherein the one or more channels comprise at least two respective channels underneath the at least two gaps.
13. The PIC of claim 1 , wherein the first photonic device comprises a Mach-Zehnder modulator, the Mach-Zehnder modulator comprising two waveguide interferometer arms formed underneath the one or more gaps defined between the two or more electrodes.
14. The PIC of claim 13 , wherein the waveguide interferometer arms are greater than 0.1 mm in length.
15. The PIC of claim 13 , wherein the transmission line comprises at least three electrodes defining at least two gaps therebetween, each of the two waveguide interferometer arms formed underneath a respective one of the at least two gaps.
16. The PIC of claim 13 , wherein the two waveguide interferometer arms each comprise a III-V waveguide embedded in the cladding layer and a silicon rib waveguide core underneath the III-V waveguide.
17. The PIC of claim 1 , wherein the first photonic device comprises a traveling-wave photodetector, the traveling-wave photodetector comprising a waveguide formed underneath a gap defined between two electrodes.
18. The PIC of claim 17 , wherein the waveguide is configured to bring light into a photoabsorption region of at least 0.1 mm in length, light absorption in the photoabsorption region causing a radio-frequency signal to be generated on the electrodes.
19. The PIC of claim 1 , wherein the first optical device comprises a waveguide structure made at least partially from III-V semiconductor material embedded in the cladding layer.
20. The PIC of claim 19 , wherein the waveguide structures of the first optical device further comprises a rib waveguide made in the silicon device layer.