Vertical-cavity surface-emitting laser thin wafer bowing control
A vertical-cavity surface-emitting laser (VCSEL) wafer, may include: a substrate layer, epitaxial layers grown on the substrate layer, and a strain compensating layer to control bowing of the VCSEL wafer after thinning of the VCSEL wafer. The strain compensating layer may be arranged on an epitaxial side of the substrate layer. The strain compensating layer may control bowing of the thinned VCSEL wafer by at least partially compensating for compressive strain in the epitaxial layers of the VCSEL wafer.
1. A vertical-cavity surface-emitting laser (VCSEL) wafer, comprising:
a substrate layer;
epitaxial layers on the substrate layer; and
a strain compensating layer to control bowing of the VCSEL wafer after thinning of the VCSEL wafer,
wherein the strain compensating layer is arranged outside of the epitaxial layers on an epitaxial side of the substrate layer and between at least a portion of an anode layer and the epitaxial layers, and
wherein the strain compensating layer controls bowing of the thinned VCSEL wafer by at least partially compensating for compressive strain in the epitaxial layers of the VCSEL wafer.
2. The VCSEL wafer of claim 1 , wherein the strain compensating layer is a metal layer with a thickness in a range from approximately 0.2 micrometers to approximately 0.7 micrometers.
3. The VCSEL wafer of claim 1 , wherein the strain compensating layer is a Nickel-Chromium (NiCr) layer, a Platinum (Pt) layer, or a Chromium (Cr) layer.
4. The VCSEL wafer of claim 1 , wherein the strain compensating layer is arranged between portions of the anode layer.
5. The VCSEL wafer of claim 4 , wherein an adhesion layer, associated with promoting adhesion between the strain compensating layer and at least one portion of the anode layer, is arranged between the strain compensating layer and the at least one portion of the anode layer.
6. The VCSEL wafer of claim 5 , wherein the adhesion layer is a Titanium (Ti) layer with a thickness in a range from approximately 0.005 micrometers to approximately 0.03 micrometers.
7. The VCSEL wafer of claim 4 , wherein the strain compensating layer partially overlaps a portion of the anode layer in order to reduce or minimize electrical resistance associated with the strain compensating layer.
8. The VCSEL wafer of claim 1 , wherein the strain compensating layer covers a majority of a surface of the VCSEL wafer.
9. The VCSEL wafer of claim 1 , wherein the strain compensating layer is at least partially embedded in a dielectric passivation layer.
10. The VCSEL wafer of claim 1 , wherein the strain compensating layer is patterned to include openings via which light is to be emitted by VCSELs of the VCSEL wafer.
11. The VCSEL wafer of claim 10 , wherein a thickness of the strain compensating layer is selected to compensate for a decrease in strain compensation, provided by the strain compensating layer, that is caused by the openings.
12. The VCSEL wafer of claim 1 , wherein the strain compensating layer provides strain compensation based on a stress-thickness product of the strain compensating layer.
13. The VCSEL wafer of claim 1 , wherein an integrated stress-thickness product of the strain compensating layer is at least approximately 400 Megapascal-meters (MPa-m).
14. The VCSEL wafer of claim 1 , wherein VCSELs of the VCSEL wafer are bottom-emitting VCSELs.
15. A vertical-cavity surface-emitting laser (VCSEL), comprising:
a substrate layer;
epitaxial layers on the substrate layer; and
a strain compensating layer to control bowing of a thinned VCSEL wafer by at least partially compensating for compressive strain in the epitaxial layers of the thinned VCSEL wafer,
wherein the strain compensating layer is arranged outside of the epitaxial layers on an epitaxial side of the substrate layer and between at least a portion of an anode layer and the epitaxial layers.
16. The VCSEL of claim 15 , wherein the strain compensating layer is a metal layer with a thickness in a range from approximately 0.2 micrometers to approximately 0.7 micrometers.
17. The VCSEL of claim 15 , wherein the strain compensating layer is a Nickel-Chromium (NiCr) layer, a Platinum (Pt) layer, or a Chromium (Cr) layer.
18. The VCSEL of claim 15 , wherein the strain compensating layer covers a majority of a surface of a VCSEL wafer.
19. The VCSEL of claim 15 , wherein the strain compensating layer is patterned to include an opening via which light is to be emitted by the VCSEL.
20. A thinned wafer of surface-emitting lasers, comprising:
epitaxial layers on a substrate layer; and
a strain compensating layer to control bowing of the thinned wafer by at least partially compensating for compressive strain in the epitaxial layers of the thinned wafer,
wherein the strain compensating layer is arranged outside of the epitaxial layers on an epitaxial side of the substrate layer and between at least a portion of an anode layer and the epitaxial layers.