Acoustic wave resonator
An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.
1. An acoustic wave resonator, comprising:
a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part comprising a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked on the cavity,
wherein a thickness deviation of the membrane layer is expressed as 0 Å<ΔMg≤170 Å, where ΔMg is a difference between a maximum thickness and a minimum thickness of the membrane layer disposed on the cavity,
wherein the cavity comprises at least one lateral side opening connected to the outside between the membrane layer and the substrate.
2. The acoustic wave resonator of claim 1 , wherein:
the resonating part further comprises a resonance active region disposed on the cavity, and
the first electrode and the second electrode each comprise connection electrodes extended outside the resonance active region.
3. The acoustic wave resonator of claim 2 , wherein 30 μm≤Ra/Hw≤200 μm is satisfied, Ra being an area (μm2) of the resonance active region, and Hw being a total length (μm) of the at least one opening.
4. The acoustic wave resonator of claim 3 , wherein a width of each of the connection electrodes is greater than or equal to 60 μm.
5. The acoustic wave resonator of claim 2 , wherein the total length of the at least one opening is greater than or equal to a total width of the connection electrodes.
6. The acoustic wave resonator of claim 1 , wherein the substrate comprises an etch stop layer disposed on a surface thereof, and
the cavity is disposed between the etch stop layer and the membrane layer.
7. The acoustic wave resonator of claim 6 , wherein the etch stop layer comprises a same material as the membrane layer.
8. The acoustic wave resonator of claim 1 , wherein a portion of the cavity internal of a contour of the cavity and corresponding to a resonance active region of the resonating part has a cavity thickness deviation, where the cavity thickness deviation is expressed as 0 Å<ΔCg≤340 Å where ΔCg is a difference between a maximum gap and a minimum gap of the portion of the cavity.
9. A filter comprising a plurality of the acoustic wave resonator of claim 1 arranged in a ladder-type filter structure.
10. A filter comprising a plurality of the acoustic wave resonator of claim 1 arranged in a lattice-type filter structure.
11. The acoustic wave resonator of claim 1 , wherein the thickness deviation of the membrane layer is represented by a portion of the membrane layer having graded deviations over a length of the portion of the membrane layer.
12. An acoustic wave resonator, comprising:
a resonance active region spaced apart from a substrate by a cavity, the resonance active region comprising a membrane layer, a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the cavity; and
at least one opening formed in an outer portion of the cavity connecting the cavity with the outside;
wherein a gap size of the at least one opening is expressed as 30 μm≤Ra/Hw≤200 μm where Ra is an area (μm 2 ) of the resonance active region, and Hw is a total length (μm) of the at least one opening,
wherein the at least one opening is formed at a lateral side portion of the cavity, and the gap size of the opening is the same as a gap size of the cavity at the outer portion of the cavity connecting the cavity with the outside.
13. The acoustic wave resonator of claim 12 , further comprising respective connection electrodes extending to the outside of the resonance active region from the first electrode and the second electrode,
wherein a width of each of the connection electrodes is greater than or equal to 60 μm.
14. The acoustic wave resonator of claim 13 , wherein the total length of the at least one opening is equal to or greater than a total width of the connection electrodes.
15. The acoustic wave resonator of claim 12 , further comprising a cavity layer interposed between the substrate and the resonance active region,
wherein the cavity is disposed in the cavity layer.
16. The acoustic wave resonator of claim 15 , further comprising an etching stop part disposed in the cavity layer and disposed along an edge of the cavity.
17. The acoustic wave resonator of claim 12 , wherein the cavity has graded gap size deviations over a length of a portion of the cavity that is under a resonance active region of the resonating part.