Light emitting device package with a coating layer

1. A light emitting device comprising:

a reflective layer on a base;

a sidewall on the reflective layer defining a reflector cup;

a light emitting diode (LED) within the reflector cup and on the reflective layer;

a transparent coating layer on the reflective layer and at least a portion of the sidewall, the transparent coating layer surrounding at least a portion of the LED;

an opening in the transparent coating layer exposing a portion of the reflective layer; and

a conductive element connecting the LED to the exposed portion of the reflective layer, the conductive element electrically coupling the LED to the base.

2. The light emitting device of claim 1 , wherein the LED is bonded to the base via an adhesive layer.

3. The light emitting device of claim 1 , wherein:

the sidewall meets the reflective layer at an interface; and

the transparent coating layer has a thickness greater than a thickness of the interface to seal the interface.

4. The light emitting device of claim 1 , wherein the transparent coating layer comprises one or more of a Si—O material, a Si—O—N material, an AI—O material, an Al—N material, a Si—N material, and a Ti—O material.

5. The light emitting device of claim 1 , wherein the transparent coating layer has a refractive index in a range of 1.40-1.80.

6. The light emitting device of claim 1 , wherein the transparent coating layer has a thickness ranging from 40 nm to 20 μm.

7. A method for manufacturing a light emitting device, comprising:

molding an electrically insulating compound onto a first lead frame and a second lead frame to form a base including a reflector cup, the first lead frame and the second lead frame each including a respective first surface that is plated with a reflective material to form a reflective layer of the base;

depositing an adhesive layer onto the reflective layer;

mounting a light-emitting diode (LED) chip in the reflector cup via the adhesive layer;

forming a transparent coating layer on the reflective layer; and

forming an opening in the transparent coating layer to expose a portion of the reflective layer.

8. The method of claim 7 , wherein the forming the transparent coating layer comprises using a liquid deposition to deposit the transparent coating layer on the reflective layer.

9. The method of claim 7 , wherein the transparent coating layer is formed of an inorganic material selected from the group consisting of a Si—O material, a Si—O—N material, an AI—O material, an Al—N material, a Si—N material, and a Ti—O material.

10. The method of claim 7 , wherein the transparent coating layer has a refractive index in a range of 1.40-1.80 and a thickness in a range of 40 nm to 20 μm.

11. The light emitting device of claim 2 , wherein the transparent coating layer forms a seal around the adhesive layer.

12. The method of claim 7 further comprising:

connecting the LED chip to the base by a conductive element through the portion of the reflective layer exposed by the opening in the transparent coating layer.