Process for group III-V semiconductor nanostructure synthesis and compositions made using same
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
1. A composition, comprising:
one or more Group III-V semiconductor nanostructures; and
a first precursor, the first precursor comprising
a) a Group III atom which is directly bonded to at least one oxygen atom,
b) one or more phosphonate, phosphinate, and/or carboxylate moieties other than an acetate moiety bonded to a Group III atom,
c) a Group III metal oxide,
d) a Group III alkoxy or Group III aryloxy, or
e) a Group III atom substituted with three unsaturated groups.
2. The composition of claim 1 , wherein the one or more Group III-V semiconductor nanostructures comprise InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, or AlSb.
3. The composition of claim 1 , wherein the one or more Group III-V semiconductor nanostructures are nanocrystals, nanorods, branched nanostructures, or nanotetrapods.
4. The composition of claim 1 , wherein the one or more Group III-V semiconductor nanostructures are substantially spherical nanocrystals.
5. The composition of claim 1 , wherein the Group III atom is B, Al, Ga, In, or Tl.
6. The composition of claim 1 , wherein the Group III metal oxide is indium oxide or gallium oxide.
7. The composition of claim 1 , wherein the Group III alkoxy is an indium alkoxy.
8. The composition of claim 1 , wherein the Group III aryloxy is a Group III phenoxy.
9. The composition of claim 8 , wherein the Group III phenoxy is an indium phenoxy.
10. The composition of claim 1 , wherein the first precursor comprises indium phosphonate, indium carboxylate, indium tristearate, indium oxide, gallium oxide, indium phenoxy, triallyl indium, trivinyl indium, tributadiene indium, trialkylethynyl indium, trialkylethenyl indium, tri-4-phenylethynyl indium, trialkylphenylethynyl indium, tris-alpha-cyclohexanone indium (III), an indium tris-Cp compound, an indium tris-(substituted Cp) compound, tris-cyclopentadienyl indium(III) or tris(n-hexyl cyclopentadienyl) indium(III).
11. The composition of claim 1 , further comprising a second precursor, a first surfactant, a second surfactant, and/or a non-coordinating solvent.
12. The composition of claim 11 , wherein the second precursor comprises
a) a Group V atom substituted with three unsaturated groups,
b) a triacyl substituted Group V atom,
c) a Group V atom substituted with three carboxamide groups,
d) a triaryl substituted Group V atom, or
e) a Group V atom substituted with three carboxylate moieties or with three phosphinate moieties.
13. The composition of claim 11 , wherein the second precursor is a triacylphosphine or a triacylarsine, a tricarboxamide phosphine, or a phosphite ester.
14. The composition of claim 11 , wherein the second precursor is triallylphosphine, trivinylphosphine, tributadienylphosphine, trialkylethynylphosphine, trialkylethenylphosphine, tri(4-phenylethynyl)phosphine, trialkylphenylethynylphosphine, tribenzoylphosphine, trialkylbenzoylphosphine, trihexylbenzoylphosphine, trialkoylphosphine, trihexoylphosphine, N,N,N,N,N,N-hexaethylphosphine tricarboxamide, tribenzylphosphine, tribenzylarsine, tri-2-furylphosphine, or tri-2-furfurylphosphine.