Method of manufacturing oxidation layer for solar cell
A method of manufacturing an oxidation layer for a solar cell is disclosed. The method includes exposing a substrate to a wet oxidation atmosphere and forming an oxidation layer on the substrate by maintaining a concentration of an oxidizing agent in the wet oxidation atmosphere for a process time.
1. A method of manufacturing an oxidation layer for a solar cell using an etching facility equipped with a plurality of baths to remove a saw damage from a substrate by wet etching, the method comprising:
removing the saw damage of the substrate by using the etching facility;
forming a wet oxidation atmosphere by filling any one of the plurality of baths of the etching facility with an oxidation vapor; and
forming an oxidation layer on the substrate by exposing the substrate to the wet oxidation atmosphere at room temperature,
wherein a pressure of the wet oxidation atmosphere is 1.1 to 1.3 atm,
wherein the substrate is a silicon substrate and the oxidation layer is a silicon oxidation layer (SiO 2 ), and
wherein a thickness of the oxidation layer is 0.5 nm to 2 nm.
2. The method of claim 1 , wherein a concentration of an oxidizing agent in the oxidation vapor is 3 to 100 ppm.
3. The method of claim 1 , wherein the substrate is exposed to the wet oxidation atmosphere for 30 to 600 seconds.
4. The method of claim 1 , wherein an oxidizing agent in the oxidation vapor is any one selected from O 2 , H 2 O and O 3 .
5. The method of claim 1 , wherein the wet oxidation atmosphere with the oxidation vapor is formed by pressurizing and spraying O 2 gas having a purity of 99.9% or less alone.
6. The method of claim 1 , wherein the wet oxidation atmosphere with the oxidation vapor is formed by mixing N 2 gas with O 2 gas having a purity of 99.9% or more and pressurizing and spraying the mixed gas.
7. The method of claim 1 , further comprising:
performing a hydrophobic treatment to the substrate before the forming of the wet oxidation atmosphere.
8. The method of claim 7 , wherein the performing of the hydrophobic treatment and the removing of the saw damage are performed in-situ.
9. The method of claim 7 , wherein the forming of the oxidation layer is performed in-situ with the removing of the saw damage.
10. The method of claim 1 , further comprising:
heating the oxidation layer at about 600° C.
11. The method of claim 1 , further comprising:
after the forming of the oxidation layer, drying the substrate with hot air at a temperature lower than 60° C.
12. The method of claim 1 , wherein the oxidation vapor is formed by vaporizing or heating a liquid oxidizing agent.
13. The method of claim 1 , wherein an oxidizing agent in the oxidation vapor is injected with an injection pressure of 0.1 to 0.5 Mpa.