Transformer thermal radiator for power field effect transistors
View Patent ↗A power adapter device may include a power field effect transistor (FET), a transformer including a radiant heat exchanger, and electrical conductors coupled between the power FET and the transformer. The electrical conductors may transfer heat generated by the power FET from the power FET to the transformer. The radiant heat exchanger may dissipate a portion of the heat to cool the power FET. As such, the radiant heat exchanger may function as a heat sink for the power FET, enabling efficient heat dissipation using a compact design.
1. A power adapter device, comprising:
a transformer further comprising:
a transformer printed circuit board (PCB), including primary windings; and
a radiant heat exchanger thermally coupled to the transformer PCB; and
a multilayer PCB configured to receive an alternating current (AC) power source, the multilayer PCB further comprising:
a power field effect transistor (FET) coupled to the AC power source at a first input node and coupled to the primary windings at a first output node via a first electrical conductor; and
a second electrical conductor in proximity to the power FET and coupled to the primary windings and to the AC power source;
wherein:
the first electrical conductor and the second electrical conductor form a heat transfer path between the power FET and the transformer;
when a first temperature of the power FET is greater than a second temperature of the transformer, heat flows via the heat transfer path to the transformer; and
the transformer is cooled by the radiant heat exchanger, wherein the first temperature of the power FET is maintained below a maximum value when the power FET is in operation.
2. The power adapter device of claim 1 , wherein the radiant heat exchanger further comprises at least one of a copper moat, fins, a fin stack, a plate, a radiant cooler, a copper finger thermally coupled to an electromagnetic interference (EMI) shield.
3. The power adapter device of claim 1 , wherein the radiant heat exchanger further comprises a chamber formed on the transformer PCB, the chamber filled with a thermally conductive insulator and thermally coupled to an EMI shield.
4. The power adapter device of claim 1 , wherein the radiant heat exchanger comprises at least one of copper, graphene, graphite, aluminum nitride, an aluminum alloy, silicon carbide, and silicon nitride.
5. The power adapter device of claim 1 , wherein the power FET further comprises one of a gallium nitride (GaN) FET and a gate all around (GAA) FET.
6. The power adapter device of claim 1 , wherein the first electrical conductor and the second electrical conductor are formed as multilayer traces in the multilayer PCB, and wherein the first electrical conductor and the second electrical conductor comprise copper.
7. The power adapter device of claim 1 , wherein the power FET is operated using only the heat transfer path for cooling the power FET.
8. A transformer comprising:
a transformer printed circuit board (PCB), including primary windings; and
a radiant heat exchanger thermally coupled to the transformer PCB, the transformer coupled to a multilayer PCB,
the multilayer PCB configured to receive an alternating current (AC) power source, the multilayer PCB further comprising:
a power field effect transistor (FET) coupled to the AC power source at a first input node and coupled to the primary windings at a first output node via a first electrical conductor; and
a second electrical conductor in proximity to the power FET and coupled to the primary windings and to the AC power source;
wherein:
the first electrical conductor and the second electrical conductor form a heat transfer path between the power FET and the transformer;
when a first temperature of the power FET is greater than a second temperature of the transformer, heat flows via the heat transfer path to the transformer; and
the transformer is cooled by the radiant heat exchanger, wherein the first temperature of the power FET is maintained below a maximum value when the power FET is in operation.
9. The transformer of claim 8 , wherein the radiant heat exchanger further comprises at least one of a copper moat, fins, a fin stack, a plate, a radiant cooler, a copper finger thermally coupled to an electromagnetic interference (EMI) shield.
10. The transformer of claim 8 , wherein the radiant heat exchanger further comprises a chamber formed on the transformer PCB, the chamber filled with a thermally conductive insulator and thermally coupled to an EMI shield.
11. The transformer of claim 8 , wherein the radiant heat exchanger comprises at least one of copper, graphene, graphite, aluminum nitride, an aluminum alloy, silicon carbide, and silicon nitride.
12. The transformer of claim 8 , wherein the power FET further comprises one of a gallium nitride (GaN) FET and a gate all around (GAA) FET.
13. The transformer of claim 8 , wherein the first electrical conductor and the second electrical conductor are formed as multilayer traces in the multilayer PCB, and wherein the first electrical conductor and the second electrical conductor comprise copper.
14. The transformer of claim 8 , wherein the power FET is operated using only the heat transfer path for cooling the power FET.
15. An electrical circuit comprising:
a transformer including:
primary windings; and
a radiant heat exchanger thermally coupled to the transformer; and
a power field effect transistor (FET) coupled to an alternating current (AC) power source at a first input node and coupled to the primary windings at a first output node via a first electrical conductor; and
a second electrical conductor coupled to the primary windings and to the AC power source;
wherein:
the first electrical conductor and the second electrical conductor form a heat transfer path between the power FET and the transformer;
when a first temperature of the power FET is greater than a second temperature of the transformer, heat flows via the heat transfer path to the transformer; and
the transformer is cooled by the radiant heat exchanger, wherein the first temperature of the power FET is maintained below a maximum value when the power FET is in operation.
16. The electrical circuit of claim 15 , wherein the radiant heat exchanger further comprises at least one of a copper moat, fins, a fin stack, a plate, a radiant cooler, a copper finger thermally coupled to an electromagnetic interference (EMI) shield.
17. The electrical circuit of claim 15 , wherein the radiant heat exchanger further comprises a chamber formed on the transformer PCB, the chamber filled with a thermally conductive insulator and thermally coupled to an EMI shield.
18. The electrical circuit of claim 15 , wherein the radiant heat exchanger comprises at least one of copper, graphene, graphite, aluminum nitride, an aluminum alloy, silicon carbide, and silicon nitride.
19. The electrical circuit of claim 15 , wherein the power FET further comprises one of a gallium nitride (GaN) FET and a gate all around (GAA) FET.
20. The electrical circuit of claim 15 , wherein the power FET is operated using only the heat transfer path for cooling the power FET.