Contact configuration for optoelectronic device
An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.
1. An optoelectronic device comprising:
an n-type semiconductor layer having a surface;
a mesa located over a first portion of the surface of the n-type semiconductor layer and having a mesa boundary;
an n-type contact region located over a second portion of the surface of the n-type semiconductor layer entirely distinct from the first portion, wherein the n-type contact region is at least partially defined by the mesa boundary;
a first n-type metallic contact layer located over at least a portion of the n-type contact region in proximity of the mesa boundary, wherein the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer; and
a second metallic contact layer located over a second portion of the n-type contact region, wherein the second metallic contact layer is formed of a reflective metallic material, wherein the first n-type metallic contact layer is formed of a first metal and the second metallic contact layer is formed of a second metal, wherein the first metal is distinct from the second metal, and wherein the n-type semiconductor layer includes at least one-scattering element.
2. The optoelectronic device of claim 1 , wherein the first n-type metallic contact layer and the second metallic contact layer at least partially overlap.
3. The optoelectronic device of claim 1 , wherein a third metallic contact layer is located over at least a portion of the first n-type metallic contact layer and at least a portion of the second metallic contact layer.
4. The optoelectronic device of claim 1 , wherein the n-type semiconductor layer comprises a group III nitride semiconductor.
5. The optoelectronic device of claim 1 , wherein the first n-type metallic contact layer comprises a plurality of domains with each domain having a smallest characteristic length-scale being at least a current spreading length width of the n-type semiconductor contact layer.
6. The optoelectronic device of claim 1 , further comprising a dielectric layer located between at least a portion of the n-type contact region and the first n-type metallic contact layer, wherein the dielectric layer includes a plurality of voids extending there through, and wherein the first n-type metallic contact layer penetrates the plurality of voids and directly contacts the at least the portion of the n-type contact region.
7. The optoelectronic device of claim 1 , wherein the at least one scattering element includes a plurality of voids, each of the plurality of voids having a depth of 0.1-50 microns and a lateral size of 0.1-20 microns.
8. The optoelectronic device of claim 7 , wherein at least a portion of the plurality of voids are at least partially filled with target radiation scattering material.
9. The optoelectronic device of claim 7 , wherein at least one of: the first n-type metallic contact layer or the second n-type metallic contact layer, fills at least a portion of the plurality of voids.
10. The optoelectronic device of claim 1 , wherein the n-type semiconductor layer comprises a set of angled side surfaces, wherein at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a normal vector to a top surface of the n-type semiconductor contact layer.
11. The optoelectronic device of claim 1 , wherein the mesa comprises a set of angled side surfaces, wherein at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a normal vector of a top surface of the mesa.
12. The optoelectronic device of claim 1 , further comprising:
a substrate; and
a buffer layer located over the substrate, wherein the n-type semiconductor layer is located over the buffer layer.
13. The optoelectronic device of claim 12 , wherein a surface area of a top surface of the n-type semiconductor layer is at least 5% smaller than a surface area of a top surface of the buffer layer.
14. The optoelectronic device of claim 12 , wherein a surface area of a top surface of the buffer layer is at least 5% smaller than a surface area of the top surface of the substrate.
15. The optoelectronic device of claim 12 , wherein the buffer layer comprises a set of angled side surfaces, wherein at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a normal vector of a top surface of the buffer layer.
16. The optoelectronic device of claim 1 , wherein the mesa boundary includes a plurality of interconnected fingers, and wherein the first n-type metallic contact layer extends between the plurality of interconnected fingers.
17. A method of fabricating an optoelectronic device comprising:
forming a mesa having a mesa boundary over a first portion of an n-type semiconductor layer, wherein the mesa includes an active semiconductor layer and a p-type semiconductor contact layer located on an opposite side of the active semiconductor layer as the n-type semiconductor layer, and wherein the n-type semiconductor layer has an n-type contact region located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, wherein the n-type contact region is at least partially defined by the mesa boundary;
forming at least one scattering element in the n-type semiconductor layer;
depositing a first n-type metallic contact layer over a first portion of the n-type contact region in proximity to the mesa boundary; and
depositing a second n-type metallic contact layer over a second portion of the n-type contact region, wherein the first n-type metallic contact layer is formed of a first metal and the second metallic contact layer is formed of a second metal, wherein the first metal is distinct from the second metal.
18. The method of claim 17 , wherein the first n-type metallic region and the second n-type metallic contact region at least partially overlap.
19. The method of claim 17 , wherein the forming at least one scattering element includes, prior to deposition of the first and the second n-type metallic contact layers, etching the n-type contact region to form a plurality of voids, wherein the plurality of voids have a depth of 0.1-50 microns and a lateral size of 0.1-20 microns.