Sample plate for mass spectrometric analysis, mass spectrometric analysis method, and mass spectrometric analysis device

1. A sample plate for mass spectrometric analysis, which comprises a substrate and a metal thin film formed on the substrate, wherein a surface of the metal thin film opposite to a substrate side is an outermost surface, wherein the metal thin film is selected from the group consisting of the following (A), (B), and (C):

(A) a metal thin film containing Ag and at least one additive element M Ag selected from the group consisting of Pd, Au, Pt, Ir, Cu, Al, Zn, Sn, Ni, Cr, Co, Zr, Si, Ti, Sb, Ga, Nd, Ge and Bi, wherein a ratio M Ag /Ag of the total number of atoms of the additive element M Ag to the number of atoms of Ag in the metal thin film is from 0.001 to 0.5;

(B) a metal thin film containing Al and at least one additive element M Al selected from the group consisting of Nd, Cu, Si, Mg, Cr, Mn, Zn, Fe, Ta, Ni, La, Ge, Ga, Ag, Au, Pd, Pt, Ir and Ti, wherein a ratio M Al /Al of the total number of atoms of the additive element M Al to the number of atoms of Al in the metal thin film is from 0.001 to 0.5; and

(C) a metal thin film containing Cu and at least one additive element M Cu selected from the group consisting of Sn, Zn, Pb, Ni, Al, Fe, Mn, Au, Ti, Cr, Mg, Si, In, Ga, Se, Ca, Ag, Au, Pd, Pt, Ir and P, wherein a ratio M Cu /Cu of the total number of atoms of the additive element M Cu to the number of atoms of Cu in the metal thin film is from 0.001 to 0.5,

wherein the metal thin film is deposited or sputtered and a thickness of the metal thin film is from 0.1 to 20 nm, and

wherein the sample plate does not contain concave-convex structures, nanostructures, and microstructures formed on its surface.

2. The sample plate according to claim 1 , wherein the sample plate comprises the metal thin film (A), wherein the metal thin film (A) comprises a number of oxygen (O) atoms, and wherein a ratio O/Ag of the number of 0 atoms to the number of Ag atoms in the metal thin film (A) is from 0 to 0.2.

3. The sample plate according to claim 2 , wherein the ratio O/Ag of the number of O atoms to the number of Ag atoms in the metal thin film (A) is from 0.05 to 0.2.

4. The sample plate according to claim 1 , wherein the sample plate comprises the metal thin film (A), and resistivity of the metal thin film (A) is at most 1×10 −4 Ω·cm.

5. The sample plate according to claim 1 , wherein in an X-ray photoelectron spectrum of the surface of the metal thin film (A) obtained by X-ray photoelectron spectroscopy, integrated intensity of a peak observed at a binding energy position higher by from 2.5 to 5 eV than the position 368 eV of a peak derived from Ag3d 5/2 photoelectrons, is higher than 0.001, wherein the integrated intensity of the peak derived from Ag3d 5/2 photoelectrons is 1.

6. The sample plate according to claim 1 , wherein the sample plate comprises the metal thin film (B), wherein the metal thin film (B) comprises a number of oxygen (O) atoms, and wherein a ratio O/Al of the number of O atoms to the number of Al atoms in the metal thin film (B) is from 0 to 1.5.

7. The sample plate according to claim 6 , wherein the ratio O/Al of the number of O atoms to the number of Al atoms in the metal thin film (B) is from 0.5 to 1.5.

8. The sample plate according to claim 1 , wherein the sample plate comprises the metal thin film (B), and resistivity of the metal thin film (B) is at most 1×10 −3 Ω·cm.

9. The sample plate according to claim 1 , wherein in an X-ray photoelectron spectrum of the surface of the metal thin film (B) obtained by X-ray photoelectron spectroscopy, integrated intensity of a peak observed at a binding energy position higher by from 5 to 43 eV than the position 73 eV of a peak derived from Al2p 3/2 photoelectrons, is higher than 0.01, where the integrated intensity of the peak derived from Al2p 3/2 photoelectrons is 1.

10. The sample plate according to claim 1 , wherein the sample plate comprises the metal thin film (C), wherein the metal thin film (C) comprises a number of oxygen (O) atoms, and wherein a ratio O/Cu of the number of O atoms to the number of Cu atoms in the metal thin film (C) is from 0 to 0.3.

11. The sample plate according to claim 10 , wherein the ratio O/Cu of the number of O atoms to the number of Cu atoms in the metal thin film (C) is from 0.1 to 0.3.

12. The sample plate for mass spectrometric analysis according to claim 1 , wherein the sample plate comprises the metal thin film (C), and resistivity of the metal thin film (C) is at most 1×10 −3 Ω·cm.

13. A mass spectrometric analysis method, comprising providing the sample plate of claim 1 , placing a sample on the surface of the metal thin film of the sample plate, and conducting a mass spectrometric analysis.

14. A mass spectrometric analysis device, which is provided with the sample plate for mass spectrometric analysis as defined in claim 1 .