Tunable quantum confinement and quantum dot photocathode
View Patent ↗A tunable photocathode for use in vacuum electronic devices includes a nanostructured photoemission layer including quantum confined nanostructures, such as quantum dots. The quantum confined nanostructures can be tuned (e.g., prepared to have various characteristics or parameters) in order to independently optimize various characteristics of the electron beam emitted by the photocathode. For example, by changing the material composition, size and geometry of the quantum confined nanostructures, the energy levels of the quantum confined nanostructures in the photoemission layer can be tuned to provide a photocathode having a high quantum efficiency, low emittance, fast response time to incident light pulses, long operational lifetime, and increased environmental stability compared with conventional photocathodes and cathodes in vacuum electronic devices.
1. A tunable photocathode capable of being tailored to emit an electron beam with one or more specified properties, the tunable photocathode comprising:
a photoemission layer, the photoemission layer comprising quantum confined nanostructures configured to emit quantized free electrons in the form of a coherent electron beam.
2. The tunable photocathode of claim 1 , further comprising a substrate under the photoemission layer.
3. The tunable photocathode of claim 2 , wherein the substrate comprises a conductive material selected from Au, Ag, Al, In, Mg, Ca, Zr, stainless steel, ITO, and/or IZO.
4. The tunable photocathode of claim 1 , further comprising a resonant tunneling transmission layer on the photoemission layer.
5. The tunable photocathode of claim 1 , wherein the photoemission layer has a thickness of about 10 nm to about 1 μm.
6. The tunable photocathode of claim 1 , wherein the quantum confined nanostructures comprise one or more elements selected from Cu, Ag, Zn, Cd, Hg, Ga, In, Si, Ge, Sn, P, As, Sb, S, Se, and Te.
7. The tunable photocathode of claim 6 , wherein the quantum confined nanostructures comprise at least one semiconductor material selected from a Group IV semiconductor, a II-VI semiconductor, a IV-VI semiconductor, a III-V semiconductor, a II-V semiconductor, and a I-III-VI semiconductor.
8. The tunable photocathode of claim 7 , wherein the quantum confined nanostructures comprise at least one selected from CdSe, ZnSe, CdS, ZnS, and PbSe.
9. The tunable photocathode of claim 1 , wherein the quantum confined nanostructures comprise one or more semiconductor quantum dots (QDs).
10. The tunable photocathode of claim 9 , wherein the semiconductor quantum dots comprise two or more semiconductor materials and have a core/shell structure or a heterostructure.
11. The tunable photocathode of claim 10 , wherein the semiconductor quantum dots comprise quasi-type-II CdSe/CdS core/shell quantum dots.
12. The tunable photocathode of claim 1 , wherein the quantum confined nanostructures comprise one or more ligands selected from F − , Cl − , Br − , I − , S 2− , OH − , N 3 − , SCN − , CN − , SeCN − , HS − , HSe − , NH 2 − , PbSe 2 2− , SnS 4 4− , and ligands including a thiol group, an amine group, a carboxylate group, and/or a phosphonate group.
13. A vacuum electronic device comprising:
the tunable photocathode of claim 1 ;
an anode; and
a light source,
wherein the tunable photocathode and anode are under vacuum and the light source is directed toward the tunable photocathode.
14. A method of generating an electron beam, the method comprising:
exciting a photocathode with a light source to emit electrons, the photocathode comprising:
a substrate; and
a photoemission layer on the substrate, the photoemission layer comprising quantum confined nanostructures configured to emit quantized free electrons in the form of a coherent electron beam.
15. The method of claim 14 , wherein the quantum confined nanostructures comprise one or more elements selected from Cu, Ag, Zn, Cd, Hg, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, S, Se, and Te.
16. The method of claim 15 , wherein the quantum confined nanostructures comprise at least one semiconductor material selected from a Group IV semiconductor, a II-VI semiconductor, a IV-IV semiconductor, a III-V semiconductor, a II-V semiconductor, and a I-III-VI semiconductor.
17. The method of claim 16 , wherein the quantum confined nanostructures comprise at least one selected from CdSe, ZnSe, CdS, ZnS, and PbSe.
18. The method of claim 14 , wherein the quantum confined nanostructures comprise one or more semiconductor quantum dots (QDs).
19. The method of claim 18 , wherein the semiconductor quantum dots (QDs) comprise two or more semiconductor materials and have a core/shell structure or a heterostructure.
20. The method of claim 19 , wherein the semiconductor quantum dots (QDs) comprise quasi-type-II CdSe/CdS core/shell quantum dots.