Integrated circuit device and method of fabricating the same
An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.
1. An integrated circuit device comprising:
a fin-type active region extending on a substrate in a first horizontal direction;
a gate line extending on the fin-type active region in a second horizontal direction intersecting the first horizontal direction;
a source/drain region in the fin-type active region at one side of the gate line;
an insulating cover extending parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate, the insulating cover vertically overlying the gate line and the source/drain region;
a source/drain contact vertically extending through the insulating cover, the source/drain contact having a first sidewall covered with the insulating cover and an end connected to the source/drain region; and
a fin isolation insulating unit vertically extending through the insulating cover into the fin-type active region, the fin isolation insulating unit being spaced apart from the gate line, with the source/drain region arranged between the fin isolation insulating unit and the gate line.
2. The integrated circuit device of claim 1 ,
wherein a top surface of the source/drain contact and a top surface of the fin isolation insulating unit extend on a same plane.
3. The integrated circuit device comprising:
a fin-type active region extending on a substrate in a first horizontal direction:
a gate line extending on the fin-type active region in a second horizontal direction intersecting the first horizontal direction;
a source/drain region in the fin-type active region at one side of the gate line;
an insulating cover extending parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate, the insulating cover vertically overlying the gate line and the source/drain region;
a source/drain contact vertically extending through the insulating cover, the source/drain contact having a first sidewall covered with the insulating cover and an end connected to the source/drain region; and
a fin isolation insulating unit vertically extending through the insulating cover into the fin-type active region, the fin isolation insulating unit being spaced apart from the gate line, with the source/drain region arranged between the fin isolation insulating unit and the gate line,
wherein the insulating cover comprises:
a first insulating cover covering the gate line, the source/drain region, and the fin-type active region and comprising a first material; and
a second insulating cover covering the first insulating cover and comprising a second material different from the first material, and
wherein a top surface of the source/drain contact, a top surface of the fin isolation insulating unit, and a top surface of the second insulating cover extend on a same plane.
4. The integrated circuit device of claim 1 ,
wherein the insulating cover comprises:
a first insulating cover covering the gate line, the source/drain region, and the fin-type active region and comprising a first material; and
a second insulating cover covering the first insulating cover and comprising a second material different from the first material,
wherein a top surface of the fin isolation insulating unit and a top surface of the first insulating cover extend on a same plane,
wherein a top surface of the source/drain contact and a top surface of the second insulating cover extend on a same plane, and
wherein the top surface of the source/drain contact is higher than the top surface of the fin isolation insulating unit.
5. The integrated circuit device of claim 1 ,
wherein the insulating cover is formed of a single layer covering the gate line, the source/drain region, and the fin-type active region, and
wherein a top surface of the source/drain contact, a top surface of the fin isolation insulating unit, and a top surface of the insulating cover extend on a same plane.
6. The integrated circuit device of claim 1 ,
wherein the insulating cover is formed of a single layer covering the gate line, the source/drain region, and the fin-type active region, and
wherein a top surface of the source/drain contact is higher than a top surface of the fin isolation insulating unit.
7. The integrated circuit device of claim 1 ,
wherein the source/drain contact comprises a lower source/drain contact and an upper source/drain contact, which are vertically connected to each other,
wherein the lower source/drain contact has an end connected to the source/drain region, and
wherein the upper source/drain contact has the first sidewall.
8. The integrated circuit device of claim 1 ,
wherein the source/drain contact integrally extends from the source/drain region to a top surface of the insulating cover, and
wherein a top surface of the source/drain contact, a top surface of the fin isolation insulating unit, and the top surface of the insulating cover extend on a same plane.
9. The integrated circuit device of claim 1 , further comprising:
a gate contact vertically extending through the insulating cover, the gate contact having an end connected to a top surface of the gate line, and
wherein a top surface of the gate contact, a top surface of the fin isolation insulating unit, and a top surface of the insulating cover extend on a same plane.
10. The integrated circuit device of claim 1 , further comprising:
a gate contact vertically extending through the insulating cover, the gate contact having an end connected to a top surface of the gate line,
wherein a top surface of the gate contact is higher than a top surface of the fin isolation insulating unit, and
wherein the top surface of the gate contact and a top surface of the insulating cover extend on a same plane.
11. The integrated circuit device of claim 1 ,
wherein the fin isolation insulating unit comprises:
a fin isolation insulating film extending in the second horizontal direction parallel to the gate line and having a sidewall covered with the insulating cover and an end filling a fin recess in the fin-type active region; and
a first fin isolation spacer between the fin isolation insulating film and the insulating cover, the first fin isolation spacer covering the sidewall of the fin isolation insulating film and having a bottom surface higher than an uppermost surface of the fin-type active region.
12. The integrated circuit device of claim 11 ,
wherein the fin isolation insulating unit further comprises:
a second fin isolation spacer between the fin isolation insulating film and the first fin isolation spacer, and
wherein the second fin isolation spacer comprises a protrusion between the first fin isolation spacer and the fin-type active region.
13. The integrated circuit device of claim 11 ,
wherein the fin isolation insulating unit further comprises:
a third fin isolation spacer between the fin isolation insulating film and the first fin isolation spacer, and
wherein the third fin isolation spacer extends from an inside of the fin recess to a same level as a top surface of the source/drain contact.
14. The integrated circuit device of claim 11 ,
wherein the fin isolation insulating film has a first width in the fin recess and a second width over the fin-type active region, and
wherein the first width is greater than the second width.
15. The integrated circuit device of claim 11 ,
wherein the fin isolation insulating film comprises a protrusion between the fin-type active region and the first fin isolation spacer.
16. An integrated circuit device comprising:
a fin-type active region extending on a substrate in a first direction;
a gate line extending on the fin-type active region in a second direction intersecting the first direction;
a first source/drain region and a second source/drain region in the fin-type active region;
an insulating cover extending parallel to the substrate, with the gate line, the first source/drain region and the second source/drain region arranged between the insulating cover and the substrate; and
a fin isolation insulating unit extending vertically through the insulating cover between the first source/drain region and the second source/drain region and having an end buried in the fin-type active region,
wherein the end of the fin isolation insulating unit is lower than a bottom surface of the first source/drain region.
17. The integrated circuit device of claim 16 , further comprising:
a lower source/drain contact vertically extending from the first source/drain region, and
an upper source/drain contact vertically extending from a top surface of the lower source/drain contact to a top surface of the insulating cover.
18. The integrated circuit device of claim 16 , further comprising:
a gate contact vertically extending from the gate line to a top surface of the insulating cover.