Balanced Mach-Zehnder modulator

1. A Mach-Zehdner (MZ) modulator comprising:

a first waveguide of a length comprising a first p-type side joined with a first n-type side on a substrate;

a second waveguide of the length comprising a second p-type side joined with a second n-type side, the second waveguide being disposed side-by-side parallel to the first waveguide on the substrate having respective sides in p-n p-n or n-p n-p order;

a first electrode and a second electrode respectively coupled to the first p-type side or the first n-type side;

a third electrode and a fourth electrode respectively coupled to the second p-type side or the second n-type side, the third electrode and the first electrode being coupled to a common ground, the second electrode being located between the first electrode and the third electrode; and

a fifth electrode disposed outside the second waveguide more distal to the first waveguide, wherein the second electrode and the fourth electrode are source electrodes respectively located between the first electrode and the third electrode and between the third electrode and the fifth electrode, thereby having the first waveguide and the second waveguide subjected to a substantially same electric field varied in a ground-source-ground pattern.

2. The MZ modulator of claim 1 wherein the first p-type side of the first waveguide and the second p-type side of the second waveguide are in parallel to each other, the first n-type side of the first waveguide and the second n-type side of the second waveguide are in parallel to each other.

3. The MZ modulator of claim 1 wherein the first waveguide and the second waveguide are made of Si or SiN patterned within the substrate.

4. The MZ modulator of claim 1 wherein the second electrode and the fourth electrode are source electrodes alternatively set at a positive and a negative bias voltage or vice versa relative to ground.

5. The MZ modulator of claim 1 further comprising a power splitter to split a beam of light via a first optical fiber and a second optical fiber respectively coupled into the first waveguide and the second waveguide.

6. The MZ modulator of claim 5 wherein the first waveguide is configured to provide a first phase modulation to a first split portion of the beam of light driven by electric field through a first voltage biased at the second electrode sandwiched by the first electrode and the third electrode commonly in ground, the second waveguide is configured to provide a second phase modulation to a second split portion of the beam of light driven by electric field imposed a second voltage biased at the fourth electrode sandwiched by the third electrode and the fifth electrode commonly in ground.

7. The MZ modulator of claim 6 wherein the first voltage and the second voltage are equal in value but alternative in polarity.

8. The MZ modulator of claim 6 wherein the beam of light is an output of a laser source.

9. A method for manufacturing a linear Mach-Zehnder modulator with balanced arms, the method comprising:

providing a substrate;

forming a first linear waveguide and a second linear waveguide in parallel in the substrate, the second linear waveguide being separated from the first linear waveguide in width direction;

forming a first PN junction by doping p-type dopants and n-type dopants respectively to two sides in length direction of the first linear waveguide;

forming a second PN junction by doping p-type dopants and n-type dopants respectively to two sides in length direction of the second linear waveguide to have a repeated p-n p-n or n-p n-p doping profile;

forming a first electrode and a second electrode to couple with the first PN junction and forming a third electrode and a fourth electrode separately to couple with the second PN junction; and

forming a fifth electrode beyond a side of the second linear waveguide distal to the first linear waveguide, the fifth electrode being commonly grounded with both the first electrode and the third electrode, the second electrode and the fourth electrode are source electrodes respectively located between the first electrode and the third electrode and between the third electrode and the fifth electrode for imposing a substantially same electric field varied in a ground-source-ground pattern across each of the first PN junction and a second PN junction.

10. The method of claim 9 wherein forming the first linear waveguide and the second linear waveguide comprise patterning, depositing, or doping Si or SiN within the substrate.

11. The method of claim 9 wherein forming the first PN junction and the second PN junction comprising implanting p-type/n-type impurity into a first side region in each of the first linear waveguide and the second linear waveguide at a first time followed by implanting n-type/p-type impurity to a second side region in each of the first linear waveguide and the second linear waveguide at a second time, wherein the second side region of the first linear waveguide is at least partially joined with the first side region of the first linear waveguide along a length direction, wherein in a repeated symmetry relative to the first linear waveguide the second side region of the second linear waveguide is at least partially joined with the first side region of the second linear waveguide along the length direction.

12. The method of claim 11 wherein forming a first electrode and the second electrode comprises coupling the first electrode to the first side region of the first linear waveguide and coupling the second electrode to the second side region of the first linear waveguide.

13. The method of claim 11 wherein forming a third electrode and a fourth electrode comprises coupling the third electrode to the first side region of the second linear waveguide and coupling the fourth electrode to the second side region of the second linear waveguide.

14. A method for balancing two arms of a Mach-Zehnder modulator, the method comprising:

providing a substrate;

forming a first linear waveguide and a second linear waveguide in parallel in the substrate, the second linear waveguide being shifted from the first linear waveguide in a direction perpendicular to the first linear waveguide;

masking a first side region of the first linear waveguide and a second side region of the second linear waveguide respectively with a first pattern and a second pattern, the second pattern being a copy of the first pattern;

implanting p-type impurity through the first pattern and the second pattern to form a first p-type side region of the first linear waveguide and a second p-type side region of the second linear waveguide having a substantially same shape;

masking a third side region of the first linear waveguide and a fourth side region of the second linear waveguide respectively with a third pattern and a fourth pattern, the fourth pattern being a copy of the third pattern;

implanting n-type impurity through the third pattern and the fourth pattern to form a third n-type side region of the first linear waveguide and a fourth n-type side region of the second linear waveguide having a substantially same shape, wherein the third n-type side region at least partially joins with the first p-type side region to form a first PN junction in the first linear waveguide and the fourth n-type side region at least partially joins with the second p-type side region to form a second PN junction in the second linear waveguide, wherein the first PN junction and the second PN junction comprise repeated p-n p-n doping profile;

forming a first electrode and a second electrode respectively coupled to first side region and the third side region associated with the first PN junction;

forming a third electrode and a fourth electrode respectively coupled to the second side region and the fourth side region associated with the second PN junction, the third electrode and the fourth electrode being respectively shifted from the first electrode and from the second electrode; and

forming a fifth electrode at a position shifted from the third electrode beyond the second PN junction, the fifth electrode being commonly grounded with both the first electrode and the third electrode, the second electrode and the fourth electrode being source electrodes respectively located between the first electrode and the third electrode and between the third electrode and the fifth electrode for imposing a substantially same electric field varied in a ground-source-ground pattern across each of the first PN junction and a second PN junction.

15. The method of claim 14 wherein the first linear waveguide and the second linear waveguide comprise Si or SiN patterned within the substrate.

16. The method of claim 14 wherein forming a fifth electrode comprises forming a combination of the third electrode, the fourth electrode, and the fifth electrode in a repeated symmetry of a combination of the first electrode, the second electrode and the third electrode.

17. The method of claim 14 wherein the second electrode and the fourth electrode are configured to be biased with a same voltage level but opposite in polarity relative to ground.