Thin-film transistor, method of manufacturing the same, and display device
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
1. A thin film transistor comprising:
a gate electrode,
a gate insulating film,
an oxide semiconductor layer having an island-like shape including
a source region,
a drain region, and
a channel region, and
a high-resistance material layer that is provided on and directly contacts the source and drain regions,
wherein the gate electrode is provided between the gate insulating film and the high-resistance material layer and the gate electrode directly contacts with the gate insulating film and the high-resistance material layer,
wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof,
wherein a density of the dopant in the source and drain regions of the oxide semiconductor layer having the island-like shape is higher than the channel region of the oxide semiconductor layer having the island-like shape, and
wherein the thin film transistor is a top gate transistor.
2. The thin film transistor of claim 1 , wherein the portion of the source and drain regions is a low-resistance region extending in a depth direction from an upper face thereof.
3. The thin film transistor of claim 2 , wherein the low-resistance region extends at least within 30 nm in the depth direction from the upper face thereof.
4. The thin film transistor of claim 1 , wherein the high-resistance material layer includes a constituent selected from the group consisting of titanium, aluminum, and indium, boron, gallium, silicon, germanium, tin, and lead.
5. The thin film transistor of claim 1 , wherein the high-resistance material layer includes any one of a plurality of island-shaped metal films and a plurality of island-shaped nonmetal films.
6. The thin film transistor of claim 5 , wherein any one of the island-shaped metal films and the island-shaped nonmetal films are spaced apart so as to provide a clearance gap.
7. The thin film transistor of claim 5 , wherein the portion of the source and drain regions is a low-resistance region extending in a depth direction from an upper face thereof, and wherein a first portion of any one of the island-shaped metal films and the island-shaped nonmetal films is in contact with the low resistance region and a second portion of any one of the island-shaped metal films and the island-shaped nonmetal films is in contact with a gate electrode.
8. The thin film transistor of claim 1 , further including an insulating layer.
9. The thin film transistor of claim 1 further including a source electrode and a drain electrode.
10. The thin film transistor of claim 1 , wherein the density of the dopant in the source and drain region is equal to or higher than 1×10 19 /cm 3 .
11. The thin film transistor of claim 1 , wherein the high-resistance material layer includes aluminum oxide, indium oxide or titanium oxide.
12. The thin film transistor of claim 1 , wherein the high-resistance material layer is provided on and directly contacts a low-resistance region of the oxide semiconductor layer.