IP Library Granted Patent US 10,446,475
Granted Patent B2
US 10,446,475 · App. 15/818,202 · Granted Oct 15, 2019

Semiconductor light emitting device and method for manufacturing the same

Inventors: Masahiko Kobayakawa (Kyoto, JP); Kazuhiro Mireba (Kyoto, JP); Shintaro Yasuda (Kyoto, JP); Junichi Itai (Kyoto, JP); Taisuke Okada (Kyoto, JP)
Assignee: ROHM CO., LTD.
H01L23/49548H01L23/31H01L23/48H01L23/488H01L23/495H01L23/4951H01L23/49503H01L23/49517H01L23/49541H01L23/49575H01L25/0753H01L33/48H01L33/483H01L33/486H01L33/502H01L33/52H01L33/54H01L33/56H01L33/60H01L33/62H01L33/647H01L25/167H01L2224/48091H01L2224/48247
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Quick Facts
Patent No.
US 10,446,475
App. No.
15/818,202
Granted
Oct 15, 2019
Kind
B2
Abstract

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad. The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Claims (70)

1. A semiconductor light emitting device comprising:

a first lead including a first thick portion and a first thin portion that is smaller in thickness than the first thick portion;

a second lead spaced apart from the first lead in a first direction, the second lead including a second thick portion and a second thin portion that is smaller in thickness than the second thick portion;

at least one semiconductor light source bonded on the first thick portion of the first lead, one of the at least one semiconductor light source being electrically connected to the second lead;

a resin package supporting the first lead and the second lead, the resin package including an inclined surface that surrounds the at least one semiconductor light source in plan view; and

a sealing resin disposed in a space defined by the inclined surface of the resin package, the sealing resin covering the at least one semiconductor light source,

wherein the first thick portion, the first thin portion, the second thick portion, and the second thin portion each include an obverse surface and a reverse surface, the obverse surfaces of the first thick portion, the first thin portion, the second thick portion, and the second thin portion being flush with each other,

the resin package includes a holding portion that is held in contact with the reverse surfaces of the first thin portion and the second thin portion, the reverse surfaces of the first thick portion and the second thick portion being exposed from the holding portion of the resin package,

the whole reverse surface of the first thick portion is surrounded by the resin package in bottom plan view,

the reverse surface of the first thick portion has a first exposed linear edge and a second exposed linear edge that extend in different directions and that are exposed from the resin package,

the resin package includes a side surface, and

at least a part of the first thin portion is exposed from the side surface of the resin package.

2. The semiconductor light emitting device of claim 1 , wherein the first lead includes an outer shape that is non-rectangular in plan view.

3. The semiconductor light emitting device of claim 2 , wherein the first lead includes a concave-convex shape in plan view such that the outer shape of the first lead is non-rectangular in plan view.

4. The semiconductor light emitting device of claim 2 , wherein the reverse surface of the first thick portion includes an exposed part that is exposed from the resin package and that extends with a constant width in plan view.

5. The semiconductor light emitting device of claim 2 , wherein the reverse surface of the first thick portion includes an exposed part that is exposed from the resin package and that includes at least two exposed regions adjacent to each other, the at least two exposed regions having different widths in plan view and being exposed from the resin package.

6. The semiconductor light emitting device of claim 5 , wherein the at least one semiconductor light source includes a plurality of semiconductor light sources,

the first lead includes a wide portion and a narrow portion that is smaller in width in plan view than the wide portion, and

the number of the semiconductor light sources bonded on the wide portion is greater than the number of the semiconductor light sources bonded on the narrow portion.

7. The semiconductor light emitting device of claim 2 , wherein the first lead includes at least one projection that projects in plan view.

8. The semiconductor light emitting device of claim 7 , wherein the at least one projection includes a plurality of projections that each project in plan view.

9. The semiconductor light emitting device of claim 7 , wherein each of the at least one projection is smaller in thickness than the first thick portion.

10. The semiconductor light emitting device of claim 1 , wherein the first thin portion surrounds the first thick portion in plan view.

11. The semiconductor light emitting device of claim 1 , wherein the first thin portion includes an end surface that is exposed from the side surface of the resin package, the end surface of the first thin portion being flush with the side surface of the resin package.

12. The semiconductor light emitting device of claim 11 , wherein the end surface of the first thin portion has a portion at a location, the location being located at a center of the side surface of the resin package in the first direction.

13. The semiconductor light emitting device of claim 1 , wherein the resin package includes a reverse surface that is flush with each of the reverse surface of the first thick portion and the reverse surface of the second thick portion.

14. The semiconductor light emitting device of claim 1 , wherein a whole part of one of the at least one semiconductor light source overlaps with the first thick portion in plan view.

15. The semiconductor light emitting device of claim 1 , wherein the first lead overlaps with a center of the resin package in plan view.

16. The semiconductor light emitting device of claim 15 , wherein the first thick portion of the first lead overlaps with the center of the resin package in plan view.

17. The semiconductor light emitting device of claim 15 , wherein one of the at least one semiconductor light source is bonded on the first thick portion at a position near the center of the resin package in plan view.

18. The semiconductor light emitting device of claim 1 , wherein the at least one semiconductor light source includes a plurality of semiconductor light sources that are bonded on the first thick portion.

19. The semiconductor light emitting device of claim 18 , wherein the plurality of semiconductor light sources are bonded at positions near a center of the resin package in plan view.

20. The semiconductor light emitting device of claim 18 , wherein the plurality of semiconductor light sources emit light of a same color.

21. The semiconductor light emitting device of claim 18 , wherein the plurality of semiconductor light sources emit light of blue.

22. The semiconductor light emitting device of claim 18 , further comprising a fluorescent material mixed in the sealing resin,

wherein the plurality of semiconductor light sources emit light of blue.

23. The semiconductor light emitting device of claim 1 , wherein the resin package is made of a white resin.

24. The semiconductor light emitting device of claim 1 , wherein each of the first and second leads is made of Cu, a Cu alloy or an Fe—Ni alloy.

25. The semiconductor light emitting device of claim 24 , wherein each of the first and second leads is plated with a plating layer.

26. The semiconductor light emitting device of claim 25 , wherein the plating layer is made of a material that has an affinity for the resin package.

27. The semiconductor light emitting device of claim 25 , wherein each of the first and second leads includes a part on which the plating layer is formed, the part of each of the first and second leads being covered by the resin package.

28. The semiconductor light emitting device of claim 1 , wherein a whole thickness of the semiconductor light emitting device is not greater than 0.6 mm.

29. The semiconductor light emitting device of claim 1 , wherein the first exposed linear edge is greater in length than the second exposed linear edge.

30. The semiconductor light emitting device of claim 1 , wherein the first exposed linear edge is directly connected to the second exposed linear edge.

31. The semiconductor light emitting device of claim 1 , wherein the first exposed linear edge is perpendicular to the second exposed linear edge.

32. A semiconductor light emitting device comprising:

a first lead including a first thick portion and a first thin portion that is smaller in thickness than the first thick portion;

a second lead spaced apart from the first lead in a first direction, the second lead including a second thick portion and a second thin portion that is smaller in thickness than the second thick portion;

at least one semiconductor light source bonded on the first thick portion of the first lead, one of the at least one semiconductor light source being electrically connected to the second lead;

a resin package supporting the first lead and the second lead, the resin package including an inclined surface that surrounds the at least one semiconductor light source in plan view; and

a sealing resin disposed in a space defined by the inclined surface of the resin package, the sealing resin covering the at least one semiconductor light source,

wherein the first thick portion, the first thin portion, the second thick portion, and the second thin portion each include an obverse surface and a reverse surface, the obverse surfaces of the first thick portion, the first thin portion, the second thick portion, and the second thin portion being flush with each other,

the resin package includes a holding portion that is held in contact with the reverse surfaces of the first thin portion and the second thin portion, the reverse surfaces of the first thick portion and the second thick portion being exposed from the holding portion of the resin package,

the whole reverse surface of the first thick portion is surrounded by the resin package in bottom plan view,

the first lead includes an outer shape that is non-rectangular in plan view,

the resin package includes a side surface,

at least a part of the first thin portion is exposed from the side surface of the resin package,

the first thin portion includes an end surface that is exposed from the side surface of the resin package, the end surface of the first thin portion being flush with the side surface of the resin package,

the resin package includes a reverse surface that is flush with each of the reverse surface of the first thick portion and the reverse surface of the second thick portion,

a whole part of one of the at least one semiconductor light source overlaps with the first thick portion in plan view, and

the reverse surface of the first thick portion has a first exposed linear edge and a second exposed linear edge that extend in different directions and that are exposed from the resin package.

33. The semiconductor light emitting device of claim 32 , wherein the at least one semiconductor light source includes a plurality of semiconductor light sources that are bonded on the first thick portion,

the plurality of semiconductor light sources emit light of blue,

the semiconductor light emitting device further comprises a fluorescent material mixed in the sealing resin, and

the plurality of semiconductor light sources emit light of blue.

34. The semiconductor light emitting device of claim 33 , wherein the reverse surface of the first thick portion includes an outer shape that is rectangular in plan view.

35. The semiconductor light emitting device of claim 32 , wherein the first exposed linear edge is greater in length than the second exposed linear edge.

36. The semiconductor light emitting device of claim 32 , wherein the first exposed linear edge is directly connected to the second exposed linear edge.

37. The semiconductor light emitting device of claim 32 , wherein the first exposed linear edge is perpendicular to the second exposed linear edge.

38. The semiconductor light emitting device of claim 32 , wherein the end surface of the first thin portion has a portion at a location, the location being located at a center of the side surface of the resin package in the first direction.

Assignments (1)
PATENT ASSIGNMENT Recorded Mar 6, 2025
From: ROHM CO., LTD.
To: NICHIA CORPORATION
Reel/Frame 070433/0125 →
Priority Claims (3)
JP 2008-60781 · Mar 11, 2008 · national
JP 2008-236997 · Sep 16, 2008 · national
JP 2009-3288 · Jan 9, 2009 · national
Continuity (5)
Continuation 15457679 · Mar 13, 2017
Division 14562998 · Dec 8, 2014
Continuation 14108922 · Dec 17, 2013
Continuation 12401852 · Mar 11, 2009
Related Publication 20180076371A1 · Mar 15, 2018