Quantum dot LED with spacer particles
View Patent ↗Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.
1. An illumination device, comprising:
a first conductive layer;
a second conductive layer; and
an active layer disposed between the first conductive layer and the second conductive layer,
wherein the active layer comprises quantum dots configured to emit light when an electric field is generated between the first and second conductive layers,
wherein the quantum dots are interspersed with spacer particles that are configured to not emit light when the electric field is generated between the first and second conductive layers,
wherein the spacer particles comprise a first group of spacer particles and a second group of spacer particles,
wherein the first group of the spacer particles has a first spacer particle size substantially equal to a size of the quantum dots and the second group of the spacer particles has a second spacer particle size smaller than the size of the quantum dots, and
wherein the first and second group of the spacer particles comprise a same material.
2. The illumination device of claim 1 , wherein each of the quantum dots comprises a core structure and a shell structure surrounding the core structure.
3. The illumination device of claim 2 , wherein the spacer particles comprise the same material as the shell structure.
4. The illumination device of claim 2 , wherein each of the quantum dots comprises first ligands bound to the shell structure of each of the quantum dots.
5. The illumination device of claim 4 , wherein the spacer particles comprise second ligands bound to the spacer particles.
6. The illumination device of claim 5 , wherein the first ligands on the quantum dots have a same material as the second ligands on the spacer particles.
7. The illumination device of claim 1 , wherein each of the quantum dots comprises a gradient material structure.
8. The illumination device of claim 1 , wherein the quantum dots and the spacer particles have a 1:1 concentration ratio in the active layer.
9. The illumination device of claim 1 , wherein the first conductive layer comprises indium tin oxide (ITO).
10. The illumination device of claim 1 , wherein the second conductive layer comprises aluminum.
11. The illumination device of claim 1 , further comprising:
a first transport layer configured to facilitate transport of holes from the first conductive layer to the active layer; and
a second transport layer configured to facilitate transport of electrons from the second conductive layer to the active layer.
12. A quantum dot light emitting diode (QLED), comprising:
a first conductive layer on a substrate;
an active layer disposed on the first conductive layer, wherein the active layer comprises quantum dots and non-luminescent spacer particles; and
a second conductive layer disposed on the active layer,
wherein the quantum dots are configured to emit light when an electric field is generated between the first and second conductive layers,
wherein the non-luminescent spacer particles comprise a first group of non-luminescent spacer particles and a second group of non-luminescent spacer particles,
wherein the first group of the non-luminescent spacer particles has a first particle size and the second group of the non-luminescent spacer particles has a second particle size different from the first particle size,
wherein the first and second group of the non-luminescent spacer particles comprise a same material.
13. The QLED of claim 12 , wherein the first particle size is smaller than a quantum dot size.
14. The QLED of claim 12 , wherein the second particle size is substantially equal to a quantum dot size.
15. The QLED of claim 12 , wherein the quantum dots and the non-luminescent spacer particles have a 1:1 concentration ratio in the active layer.
16. The QLED of claim 12 , wherein the quantum dots and the non-luminescent spacer particles have a 2:1 concentration ratio in the active layer.
17. The QLED of claim 12 , wherein the quantum dots and the non-luminescent spacer particles have a 1:2 concentration ratio in the active layer.
18. The QLED of claim 12 , wherein each of the quantum dots comprises a core structure and a shell structure surrounding the core structure; and
wherein each of the non-luminescent spacer particles comprises the same material as the shell structure.
19. The QLED of claim 12 , wherein each of the non-luminescent spacer particles comprises a ligand bound to its outer surface.
20. The QLED of claim 12 , wherein the first conductive layer comprises indium tin oxide (ITO) and the second conductive layer comprises aluminum.
21. The QLED of claim 12 , further comprising:
a first transport layer, on the first conductive layer, configured to facilitate transport of holes from the first conductive layer to the active layer; and
a second transport layer, on the active layer, configured to facilitate transport of electrons from the second conductive layer to the active layer.