IP Library Granted Patent US 10,348,305
Granted Patent B2
US 10,348,305 · App. 15/826,047 · Granted Jul 9, 2019

Level shift circuit

Inventors: Hideyuki Sawai (Chiba, JP); Masakazu Sugiura (Chiba, JP)
Assignee: ABLIC INC.
H03K19/018521H03K19/00361
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Quick Facts
Patent No.
US 10,348,305
App. No.
15/826,047
Granted
Jul 9, 2019
Kind
B2
Abstract

Provided is a level shift circuit capable of converting a negative voltage level as well as a positive voltage level. The level shift circuit includes a switching transistor between an input transistor and a load, the switching transistor including a gate connected to a voltage source, and an input negative voltage level is converted into a second negative voltage level based on a voltage of the voltage source and a threshold voltage of the switching transistor.

Claims (15)

1. A level shift circuit comprising:

a first transistor including a gate connected to an input terminal and a source that receives a signal at a first negative voltage level;

a second transistor including a gate connected to a voltage source and a drain connected to a drain of the first transistor;

a load between a source of the second transistor and a power supply terminal that receives a signal at a second positive voltage level;

an output terminal connected to the source of the second transistor,

the input terminal configured to receive a binary voltage signal at a first positive voltage level and the first negative voltage level, the first positive voltage level corresponding to a voltage lower than the second positive voltage level,

the output terminal configured to output a binary voltage signal at the second positive voltage level and a second negative voltage level,

wherein the second negative voltage level comprises a sum of a voltage of the voltage source and a threshold voltage of the second transistor;

a third transistor including a gate connected to the input terminal via an inverter and a source that receives the first negative voltage level;

a fourth transistor including a gate connected to the voltage source, a drain connected to a drain of the third transistor, and a source connected to the load;

a fifth transistor between the first transistor and the second transistor, and includes a gate connected to the input terminal through intermediation of the inverter;

a sixth transistor between the third transistor and the fourth transistor, and includes a gate connected to the input terminal;

a capacitor between the drain of the first transistor and the drain of the third transistor; and

a latch circuit between the load and the output terminal.

2. A level shift circuit according to claim 1 , wherein each of the second transistor and the fourth transistor comprises a clamping element between the gate and the source of the each of the second transistor and the fourth transistor.

Assignments (3)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2017
From: SAWAI, HIDEYUKI; SUGIURA, MASAKAZU
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 044253/0379 →
Priority Claims (1)
JP 2017-005908 · Jan 17, 2017 · national
Continuity (1)
Related Publication 20180205378A1 · Jul 19, 2018