Thin film transistor and display device using the same
View Patent ↗The purpose of the invention is to eliminate an abnormal current at an edge of a semiconductor layer in a thin film transistor. The invention is: A thin film transistor having a semiconductor layer comprising: a channel, a drain and a source are formed in the semiconductor layer, the channel has a channel length and a channel width, a LDD (Light Doped Drain) is formed between the channel and the drain or between the channel and the source, the LDD including a first LDD area, which is formed at a center of the LDD in the direction of the channel width, and a second LDD area, which is formed at an edge of the LDD in the direction of the channel width, wherein a width of the second LDD area in the channel length direction is bigger than a width of the first LDD area in the channel length direction.
1. A thin film transistor having a semiconductor layer, a gate insulating film and a gate electrode comprising:
a channel, a drain and a source are formed in the semiconductor layer,
the channel has a channel length and a channel width,
a LDD (Light Doped Drain) is formed between the channel and the drain or between the channel and the source,
the LDD including a first LDD area, which is formed at a center of the LDD in the direction of the channel width, and a second LDD area, which is formed at an edge of the LDD in the direction of the channel width,
wherein a width of the second LDD area in the channel length direction is bigger than a width of the first LDD area in the channel length direction.
2. The thin film transistor according to claim 1 ,
wherein the width of the second LDD area in the channel length direction is two times or more of the width of the first LDD area in the channel length direction.
3. The thin film transistor according to claim 1 ,
wherein the width of the second LDD area in the channel length direction is three times or more of the width of the first LDD area in the channel length direction.
4. The thin film transistor according to claim 1 ,
wherein the width of the second LDD area in the channel width direction is bigger than the width of the first LDD area in the channel length direction.
5. The thin film transistor according to claim 1 ,
wherein the width of the second LDD area in the channel width direction is ¼ or less compared to the width of the semiconductor layer in the channel length direction.
6. The thin film transistor according to claim 1 ,
wherein the thin film transistor is used in a pixel of a liquid crystal display device.
7. The thin film transistor according to claim 1 ,
wherein the thin film transistor is used in a driving circuit in a liquid crystal display device.
8. The thin film transistor according to claim 1 ,
wherein the thin film transistor is used in a pixel of an organic EL display device.
9. The thin film transistor according to claim 1 ,
wherein the thin film transistor is used in a driving circuit in an organic EL display device.
10. A liquid crystal display device comprising pixels and a driving circuit,
wherein each of the pixels includes the thin film transistor defined by claim 1 .
11. A liquid crystal display device comprising pixels and a driving circuit,
wherein each of the pixels and the driving circuit includes the thin film transistor defined by claim 1 .
12. An organic EL display device comprising pixels and a driving circuit,
wherein each of the pixels includes the thin film transistor defined by claim 1 .
13. An organic EL display device comprising pixels and a driving circuit,
wherein each of the pixels and the driving circuit includes the thin film transistor defined by claim 1 .