Edge-emitting etched-facet lasers
View Patent ↗A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
1. A method of testing a semiconductor laser structure comprising:
providing a waveguide formed in an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light, the waveguide extending in a first direction and having a front etched facet and a back etched facet that define an edge-emitting laser, wherein a first recessed region is formed in the epitaxial structure adjacent to the waveguide, the first recessed region including a first end wall and having an opening adjacent to the back etched facet, the first end wall spaced apart from a first adjacent laser chip to minimize back-reflection to and facilitate testing of the first adjacent laser chip prior to singulation of the first adjacent laser chip from the substrate by reflecting a laser beam emanating from the first adjacent laser chip, wherein a second recessed region is formed in the epitaxial structure adjacent to the waveguide, the second recessed region including a second end wall and having an opening adjacent to the front etched facet, the second end wall spaced apart from a second adjacent laser chip to minimize back-reflection to and facilitate testing of the second adjacent laser chip prior to singulation of the second adjacent laser chip from the substrate by reflecting a laser beam emanating from the second adjacent laser chip, wherein the first and second recessed regions and the first and second etched facets are all formed in a common contiguous portion of the epitaxial structure defining the edge-emitting laser, wherein the common contiguous portion of the epitaxial structure is spaced apart from and does not include the first and second adjacent laser chips; and
measuring characteristics of at least one of the laser beam emanating from the first adjacent laser chip in the first recessed region prior to singulation of the first adjacent laser chip from the substrate and the laser beam emanating from the second adjacent laser chip in the second recessed region prior to singulation of the second adjacent laser chip from the substrate.
2. The method of claim 1 , wherein the first end wall is formed at an angle other than normal to the first direction.
3. The method of claim 1 , wherein the back etched facet is coated with a highly reflective material.
4. The method of claim 1 , wherein the second end wall is formed at angle other than normal to the first direction.
5. The method of claim 1 , wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other.
6. The method of claim 1 , wherein the edge-emitting laser is a ridge laser.
7. The method of claim 6 , wherein the ridge laser is of a Fabry-Perot (FP) type.
8. The method of claim 6 , wherein the ridge laser is of a distributed feedback (DFB) type.
9. The method of claim 1 , wherein the edge-emitting laser is a Buried Heterostructure (BH) laser.
10. The method of claim 9 , wherein the BH laser is of a Fabry-Perot (FP) type.
11. The method of claim 9 , wherein the BH laser is of a distributed feedback (DFB) type.
12. The method of claim 1 , wherein the substrate is InP.
13. The method of claim 1 , wherein the substrate is GaAs.
14. The method of claim 1 , wherein the substrate is GaN.
15. The method of claim 1 , wherein an electrical contact is formed on the common contiguous portion of the epitaxial structure adjacent to the waveguide and the first and second recessed regions.
16. A method of testing a semiconductor laser structure comprising:
providing a first waveguide and a second waveguide in an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light, the first waveguide being formed in a first portion of the epitaxial structure extending in a first direction, the first waveguide having a first front etched facet and a first back etched facet that define a first edge-emitting laser, the second waveguide being formed in a second portion of the epitaxial structure extending in the first direction, the second waveguide having a second front etched facet and a second back etched facet that define a second edge-emitting laser, wherein a recessed region is formed in the first portion of the epitaxial structure adjacent to the first waveguide, the recessed region including an end wall and having an opening directly opposing the second front etched facet of the second waveguide, the end wall spaced apart from the second front etched facet of the second waveguide to minimize back-reflection to and facilitate testing of the second waveguide prior to singulation of the second portion of the epitaxial structure from the substrate by reflecting a laser beam emanating from the second waveguide of the second edge-emitting laser, wherein the first portion of the epitaxial structure is a common contiguous portion of the epitaxial structure comprising the recessed region and the first front and back etched facets defining the first edge-emitting laser, wherein the first portion of the epitaxial structure is spaced apart from and does not include the second portion of the epitaxial structure; and
measuring characteristics of light emanating from the second front etched facet in the recessed region prior to singulation of the second portion of the epitaxial structure from the substrate.
17. The method of claim 16 , wherein light from the second front etched facet of the second waveguide impinges on the end wall.
18. The method of claim 17 , wherein the end wall is formed at an angle other than normal to the first direction.
19. The method of claim 16 , wherein at least one of the first back etched facet and the second back etched facet is coated with a highly reflective material.
20. The method of claim 16 , wherein the edge-emitting laser is a ridge laser.
21. The method of claim 16 , wherein an electrical contact is formed on the first portion of the epitaxial structure adjacent to the waveguide and the recessed region.
22. A method of testing a semiconductor laser chip comprising:
providing a waveguide formed in an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light, the waveguide extending in a first direction and having a front etched facet and a back etched facet that define an edge-emitting laser, wherein a first recessed region is formed in said epitaxial structure, the first recessed region including a first end wall and two side walls and being arranged at a first distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip, wherein a second recessed region is formed in said epitaxial structure, the second recessed region including a second end wall and two side walls and being arranged at a second distance from the waveguide and having an opening adjacent to the front etched facet, wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other; and
measuring characteristics of light emanating from the adjacent laser chip in the first recessed region prior to singulation of the laser chip.
23. The method of claim 22 , wherein the first end wall is formed at an angle other than normal to the first direction.
24. The method of claim 23 , wherein the back etched facet is costed with a highly reflective material.
25. The method of claim 22 , wherein the second end wall is formed at angle other than normal to the first direction.
26. The method of claim 22 , wherein the edge-emitting laser is a ridge laser.
27. The method of claim 26 , wherein the ridge laser is of a Fabry-Perot (FP) type.
28. The method of claim 26 , wherein the ridge laser is of a distributed feedback (DFB) type.
29. The method of claim 22 , wherein the edge-emitting laser is a Buried Heterostructure (BH) laser.
30. The method of claim 29 , wherein the BH laser is of a Fabry-Perot (FP) type.
31. The method of claim 29 , wherein the BH laser is of a distributed feedback (DFB) type.
32. The method of claim 22 , wherein the substrate is InP.
33. The method of claim 22 , wherein the substrate is GaAs.
34. The method of claim 22 , wherein the substrate is GaN.
35. A method of testing a semiconductor laser chip comprising:
depositing an epitaxial structure on a substrate, the epitaxial structure including an active region, the active region generating light;
providing a first waveguide and a second waveguide in an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light, the first waveguide extending in a first direction and having a first front etched facet and a first back etched facet that define a first edge-emitting laser, the second waveguide extending in the first direction and having a second front etched facet and a second back etched facet that define a second edge-emitting laser, wherein a first recessed region is formed in said epitaxial structure, the first recessed region including a first end wall and two side walls and being arranged at a first distance from the waveguide and having an opening adjacent to one of the first back etched facet and the second back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip, wherein a second recessed region is formed in said epitaxial structure, the second recessed region including a second end wall and two side walls and being arranged at a second distance from the waveguide and having an opening adjacent to one of the first back etched facet and the second back etched facet, wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other; and
measuring characteristics of light emanating from the adjacent laser chip in the first recessed region prior to singulation of the laser chip.
36. The method of claim 35 , wherein at least one of the first and second edge-emitting lasers is a ridge distributed feedback (DFB) laser.
37. The method of claim 35 , wherein at least one of the first and second edge-emitting lasers is a Buried Heterostructure (BH) distributed feedback (DFB) laser.