IP Library › Granted Patent US 10,056,349
Granted Patent B2
US 10,056,349 · App. 15/831,771 · Granted Aug 21, 2018

Manufacturing method of semiconductor device and semiconductor device thereof

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Quick Facts
Patent No.
US 10,056,349
App. No.
15/831,771
Granted
Aug 21, 2018
Kind
B2
Abstract

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

Claims (37)

1. A method of manufacturing a semiconductor device, the method comprising:

providing an interposer structure comprising a first interposer base material and a first interposer directly on the first interposer base material, the first interposer having a top first interposer side and a bottom first interposer side facing the first interposer base material;

attaching a semiconductor die to the top first interposer side, the semiconductor die comprising a top die side, a bottom die side facing the top first interposer side, and lateral die sides extending between the top die side and the bottom die side;

encapsulating at least the top first interposer side and the lateral die sides with an encapsulating material, the encapsulating material having a top encapsulating material side, a bottom encapsulating material side facing the top first interposer side, and lateral encapsulating material sides extending between the top encapsulating material side and the bottom encapsulating material side;

forming a stiffener directly on at least the top encapsulating material side without an intervening layer of adhesive; and

removing the first interposer base material to expose the bottom first interposer side; and

forming a second interposer on the exposed bottom first interposer side, the second interposer comprising a top second interposer side facing the bottom first interposer side, a bottom second interposer side, and lateral second interposer sides extending between the top second interposer side and the bottom second interposer side.

2. The method of claim 1 , wherein said forming the stiffener comprises forming the stiffener directly on the top die side without an intervening layer of adhesive.

3. The method of claim 1 , wherein the first interposer base material comprises silicon and/or glass.

4. The method of claim 1 , wherein said forming the stiffener comprises forming the stiffener by performing sputtering, vapor deposition, and/or plating.

5. The method of claim 1 , comprising coupling the stiffener to a wafer support system, and wherein said removing the first interposer base material and said forming the second interposer are performed after said coupling the stiffener to the wafer support system.

6. The method of claim 1 , wherein said forming the second interposer comprises sequentially forming layers of the second interposer on the exposed bottom first interposer side, the layers of the second interposer comprising at least one dielectric layer and at least one conductive layer.

7. The method of claim 1 , wherein the first interposer comprises a first dielectric layer made of a first dielectric material, and the second interposer comprises a second dielectric layer directly contacting the first dielectric layer and made of a second dielectric material different from the first dielectric material.

8. The method of claim 1 , comprising coupling conductive balls to the bottom second interposer side, and singulating the electronic device from a wafer comprising the electronic device and one or more other electronic devices identical to the electronic device.

9. The method of claim 1 , wherein the stiffener comprises only a single layer of stiffener material, and the stiffener material comprises nickel.

10. The method of claim 1 , wherein the stiffener is the top of the completed electronic device.

11. A semiconductor device comprising:

a first interposer having a top first interposer side, a bottom first interposer side, and lateral first interposer sides extending between the top first interposer side and the bottom first interposer side;

a semiconductor die coupled to the first interposer, the semiconductor die comprising a top die side, a bottom die side facing the top interposer side, and lateral die sides extending between the top die side and the bottom die side;

an encapsulating material encapsulating at least the top first interposer side and the lateral die sides, the encapsulating material having a top encapsulating material side, a bottom encapsulating material side facing the top first interposer side, and lateral encapsulating material sides extending between the top encapsulating material side and the bottom encapsulating material side;

a second interposer on the first interposer, the second interposer comprising a top second interposer side facing and directly coupled to the bottom first interposer side, a bottom second interposer side, and lateral second interposer sides extending between the top second interposer side and the bottom second interposer side; and

a stiffener on the encapsulating material, the stiffener comprising a top stiffener side, a bottom stiffener side directly on at least the top encapsulating material side without an intervening layer of adhesive between the bottom stiffener side and the top encapsulating material side, and lateral stiffener sides extending between the top stiffener side and the bottom stiffener side.

12. The semiconductor device of claim 11 , wherein the stiffener comprises only a single layer of stiffener material.

13. The semiconductor device of claim 12 , wherein the stiffener material comprises nickel.

14. The semiconductor device of claim 11 , comprising a conductive ball coupled to the bottom second interposer side.

15. The semiconductor device of claim 11 , wherein each of the lateral stiffener sides is coplanar with a respective one of the lateral encapsulating material sides, a respective one of the lateral first interposer sides, and a respective one of the lateral second interposer sides.

16. The semiconductor device of claim 11 , wherein the first interposer comprises a first dielectric layer made of a first dielectric material, and the second interposer comprises a second dielectric layer directly contacting the first dielectric layer and made of a second dielectric material different from the first dielectric material.

17. A method of manufacturing a semiconductor device, the method comprising:

providing an interposer structure comprising a first interposer base material and a first interposer directly on the first interposer base material, the first interposer having a top first interposer side, and a bottom first interposer side facing the first interposer base material;

attaching a semiconductor die to the top first interposer side, the semiconductor die comprising a top die side, a bottom die side facing the top first interposer side, and lateral die sides extending between the top die side and the bottom die side;

forming a conductive pillar on the top first interposer side at a position that is laterally offset from a position at which the semiconductor die is attached;

encapsulating at least the top first interposer side, the lateral die sides, and a lateral side of the conductive pillar with an encapsulating material, the encapsulating material having a top encapsulating material side, and a bottom encapsulating material side facing the top first interposer side;

removing the first interposer base material to expose the bottom first interposer side; and

forming a second interposer on the exposed bottom first interposer side, the second interposer comprising a top second interposer side directly on the bottom first interposer side, and a bottom second interposer side.

18. The method of claim 17 , comprising forming a metal layer over the semiconductor die and over the encapsulating material, where a first portion of the metal layer is directly over the semiconductor die, and a second portion of the metal layer is directly over the encapsulating material but not directly over the semiconductor die.

19. The method of claim 17 , comprising coupling the top encapsulating material side to a wafer support system, and wherein said removing the first interposer base material and said forming the second interposer are performed after said coupling the top encapsulating material side to the wafer support system.

20. The method of claim 17 , wherein said forming the second interposer comprises sequentially forming layers of the second interposer on the exposed bottom first interposer side, the layers of the second interposer comprising at least one dielectric layer and at least one conductive layer.