IP Library Granted Patent US 10,930,804
Granted Patent B2
US 10,930,804 · App. 15/832,447 · Granted Feb 23, 2021

Metallization of solar cells using metal foils

Inventor: Thomas Pass (San Jose, CA)
Assignee: SunPower Corporation
H01L31/022441H01L31/0682Y02E10/547
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Quick Facts
Patent No.
US 10,930,804
App. No.
15/832,447
Granted
Feb 23, 2021
Kind
B2
Abstract

A solar cell structure includes P-type and N-type doped regions. A dielectric spacer is formed on a surface of the solar cell structure. A metal layer is formed on the dielectric spacer and on the surface of the solar cell structure that is exposed by the dielectric spacer. A metal foil is placed on the metal layer. A laser beam is used to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam ablates portions of the metal foil and the metal layer that are over the dielectric spacer. The laser ablation of the metal foil cuts the metal foil into separate P-type and N-type metal fingers.

Claims (45)

1. A solar cell structure comprising:

an N-type doped region and a P-type doped region;

a dielectric material directly over an interface between touching portions of the N-type doped region and the P-type doped region;

a first metal layer over the N-type doped region, wherein the first metal layer is electrically connected to the N-type doped region;

a second metal layer over the P-type doped region, wherein the second metal layer is electrically connected to the P-type doped region;

a first metal foil finger that is electrically bonded and press fitted to the first metal layer; and

a second metal foil finger that is electrically bonded and press fitted to the second metal layer.

2. The solar cell structure of claim 1 , wherein the solar cell comprises an all back contact solar cell.

3. The solar cell structure of claim 1 , wherein the first and second metal foil fingers comprise aluminum.

4. The solar cell structure of claim 1 , further comprising:

weld joints that attach the first metal foil finger to the first metal layer and the second metal foil finger to the second metal layer.

5. The solar cell structure of claim 1 , wherein the first and second metal layers comprise aluminum.

6. The solar cell structure of claim 1 , wherein the first and second metal layers each has a thickness in a range of approximately 0.3 micron to 1 micron.

7. The solar cell structure of claim 1 , wherein the N-type doped region and the P-type doped region are in or external to a solar cell substrate.

8. The solar cell structure of claim 1 , wherein the N-type doped region and the P-type doped region are in a polysilicon layer disposed on a solar cell substrate.

9. A solar cell structure comprising:

an N-type doped region and a P-type doped region;

a dielectric material directly over an interface between touching portions of the N-type doped region and the P-type doped region;

a first metal layer over a portion of the dielectric material and the N-type doped region, wherein the first metal layer is electrically connected to the N-type doped region;

a second metal layer over a portion of the dielectric material and the P-type doped region, wherein the second metal layer is electrically connected to the P-type doped region;

a first metal foil finger that is electrically bonded and press fitted to the first metal layer; and

a second metal foil finger that is electrically bonded and press fitted to the second metal layer.

10. The solar cell structure of claim 9 , wherein the solar cell comprises an all back contact solar cell.

11. The solar cell structure of claim 9 , wherein the first and second metal foil fingers comprise aluminum.

12. The solar cell structure of claim 9 , further comprising:

weld joints that attach the first metal foil finger to the first metal layer and the second metal foil finger to the second metal layer.

13. The solar cell structure of claim 9 , wherein each of the first and second metal layers comprises aluminum.

14. The solar cell structure of claim 9 , wherein each of the first and second metal layers has a thickness in a range of approximately 0.3 micron to 1 micron.

15. The solar cell structure of claim 9 , wherein the N-type doped region and the P-type doped region are in or external to a solar cell substrate.

16. The solar cell structure of claim 9 , wherein the N-type doped region and the P-type doped region are in a polysilicon layer disposed on a solar cell substrate.

17. A plurality of solar cell structures, comprising:

a first solar cell structure comprising:

an N-type doped region and a P-type doped region;

a dielectric material directly over an interface between touching portions of the N-type doped region and the P-type doped region of the first solar cell structure; and

a metal layer over the P-type doped region of the first solar cell structure, wherein the metal layer of the first solar cell structure is electrically connected to the P-type doped region of the first solar cell structure;

a second solar cell structure comprising:

an N-type doped region and a P-type doped region;

a dielectric material directly over an interface between touching portions of the N-type doped region and the P-type doped region of the second solar cell structure; and

a metal layer over the N-type doped region of the second solar cell structure, wherein the metal layer of the second solar cell structure is electrically connected to the N-type doped region of the second solar cell structure; and

a metal foil that is electrically bonded and press fitted to the metal layer of the first solar cell structure and that is electrically bonded and press fitted to the metal layer of the second solar cell structure.

18. The plurality of solar cell structures of claim 17 , wherein the N-type doped region and the P-type doped region of the first solar cell structure are in or external to a first solar cell substrate of the first solar cell structure, and the N-type doped region and the P-type doped region of the second solar cell structure are in or external to a second solar cell substrate of the second solar cell structure.

19. The plurality of solar cell structures of claim 17 , wherein the metal foil comprises aluminum.

20. The plurality of solar cell structures of claim 17 , wherein the metal foil comprises:

a first metal foil finger that is electrically bonded to the metal layer of the first solar cell structure; and

a second metal foil finger that is electrically bonded to the metal layer of the second solar cell structure.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2025
From: TOTALENERGIES SOLAR INTL; TOTALENERGIES SE
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 073059/0122 →
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062490/0742 →
Continuity (3)
Continuation 15230163 · Aug 5, 2016
Division 14040047 · Sep 27, 2013
Related Publication 20180097129A1 · Apr 5, 2018