Back side illuminated CMOS image sensor arrays
An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.
1. An electronic device, comprising:
a substrate comprising a photodiode;
a first positively-charged layer disposed over the substrate;
and an insulating layer disposed between the substrate and the first positively-charged layer, wherein:
the substrate and the photodiode share a surface; and
the photodiode comprises a p− region and a p region, wherein:
the p− region and the p region are in direct contact with a first n region;
the p− region and a n-well are in direct contact with a second n region;
the first n region and the second n region are in direct contact with the insulating layer;
the p− region is in direct contact with the insulating layer; and
a net doping concentration decreases in the p− region, with respect to a depth direction of the electronic device from the n-well towards the insulating layer, wherein a rate of decrease of the net doping concentration in the p− region is lower than a rate of decrease of the net doping concentration in a portion of the p region.
2. The electronic device of claim 1 , wherein:
the first positively-charged layer is disposed on the insulating layer; and
the photodiode is configured to receive the light after the light passes through the first positively-charged layer and the insulating layer.
3. The electronic device of claim 2 , wherein the electric potential increases, with respect to the depth direction of the electronic device from the n-well towards the insulating layer, in the p− region, at a faster rate as a distance from the p region increases.
4. The electronic device of claim 1 , further comprising a second positively-charged layer disposed over another surface of the substrate, wherein the second positively-charged layer is configured to attract electrons in the substrate to accumulate at the another surface.
5. The electronic device of claim 1 , wherein the electronic device is implemented in each of a plurality of pixels of a light sensor.
6. The electronic device of claim 1 , wherein an electric potential increases, with respect to the depth direction of the electronic device from the n-well towards the insulating layer, at a faster rate in the p region compared to the p− region.
7. The electronic device of claim 1 , wherein the net doping concentration increases, with respect to the depth direction of the electronic device from the n-well towards the insulating layer, at a first rate in a first portion of the p region and decreases, with respect to a depth direction of the electronic device from the n-well towards the insulating layer, at a second rate in a second portion of the p region, the first rate being higher than the second rate.
8. A sensing method, comprising:
disposing a first positively-charged layer over a substrate and an insulating layer between the substrate and the first positively-charged layer; and
exposing a surface of the substrate to light, causing a photodiode in the substrate to receive light, wherein:
the substrate and the photodiode share the surface;
the photodiode comprises a p− region and a p region;
the p− region and the p region are in direct contact with a first n region;
the p− region and a n-well are in direct contact with a second n region;
the first n region and the second n region are in direct contact with the insulating layer;
the p− region is in direct contact with the insulating layer; and
a net doping concentration decreases in the p− region, with respect to a depth direction of the electronic device from the n-well towards the insulating layer, wherein a rate of decrease of the net doping concentration in the p− region is lower than a rate of decrease of the net doping concentration in a portion of the p region.
9. The sensing method of claim 8 , wherein:
the photodiode is caused to receive the light after the light passes through the first positively-charged layer and the insulating layer.
10. The sensing method of claim 8 , further comprising:
disposing a second positively-charged layer over another surface of the substrate, causing electrons in the substrate to accumulate at the another surface.
11. An image sensor including at least one pixel for collecting charge in its photodiode, comprising:
a substrate comprising a photodiode;
a first positively-charged layer disposed over the substrate;
an insulating layer disposed between the substrate and the first positively-charged layer, wherein:
the substrate and the photodiode share a surface;
the photodiode comprises a p− region and a p region;
the p− region and the p region are in direct contact with a first n region;
the p− region and a n-well are in direct contact with a second n region;
the first n region and the second n region are in direct contact with the insulating layer;
the p− region is in direct contact with the insulating layer; and
a net doping concentration decreases in the p− region, with respect to a depth direction of the electronic device from the n-well towards the insulating layer, wherein a rate of decrease of the net doping concentration in the p− region is lower than a rate of decrease of the net doping concentration in a portion of the p region.
12. The image sensor of claim 11 , further comprising an insulating layer disposed on the surface, wherein:
the photodiode is configured to receive the light after the light passes through the first positively-charged layer and the insulating layer.