Granted Patent B2

US 10,398,034 · App. 15/835,116 · Granted Aug 27, 2019

Abstract

Claims (22)

1. A method of making a device patterned with one or more electrically conductive features, the method comprising:

depositing a conductive material layer over an electrically insulating surface of a substrate;

depositing an anti-corrosive material layer over the conductive material layer;

depositing an etch-resist material layer over the anti-corrosive material layer, the etch-resist material layer and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device;

performing a wet-etch process to remove the exposed portions of the conductive material layer from the electrically insulating substrate; and

removing the bi-component etch mask to expose the remaining conductive material of the covered portions of the conductive material layer, thereby forming the one or more electrically conductive features of the device.

2. The method of claim 1 , wherein depositing the anti-corrosive material layer over the conductive material layer comprises depositing a polymer over the conductive material layer.

3. The method of claim 1 , wherein depositing the anti-corrosive material layer over the conductive material layer comprises depositing an organic material over the conductive material layer.

4. The method of claim 3 , wherein the organic material comprises one or more -imine groups.

5. The method of claim 3 , wherein the organic material comprises one or more -amine groups.

6. The method of claim 3 , wherein the organic material comprises one or more -azole groups.

7. The method of claim 3 , wherein the organic material comprises one or more -hyrazine groups.

8. The method of claim 3 , wherein the organic material comprises an amino acid.

9. The method of claim 3 , wherein the organic material comprises a Schiff Base.

10. The method of claim 1 , further comprising, during performing of the wet-etching process, dissociating a portion of anti-corrosive material from the bi-component etch mask and adsorbing the dissociated portion of anti-corrosive material to an outer surface of the conductive material layer under the bi-component etch mask.

11. The method of claim 1 , further comprising, during performing of the wet-etching process, protecting a portion of the conductive material layer proximate the bi-component etch mask from being removed during removal of a portion of the conductive material layer proximate the electrically insulating surface of the substrate.

12. The method of claim 1 , wherein depositing the anti-corrosive material layer over the conductive material layer comprises depositing the anti-corrosive material layer in a blanket coating over the conductive material layer.

13. The method of claim 1 , wherein depositing the anti-corrosive material layer over the conductive material layer comprises depositing the anti-corrosive material layer in the pattern corresponding to the one or more conductive features.

14. The method of claim 1 , wherein depositing the etch-resist material layer comprises depositing the etch-resist material layer in a blanket coating over the anti-corrosive material layer.

15. The method of claim 1 , wherein depositing the etch-resist material layer comprises depositing the etch-resist material layer using at least one of inkjet printing, slot die coating, spin coating, or lamination.

16. The method of claim 1 , wherein depositing the anti-corrosive material layer comprises depositing the anti-corrosive material layer using at least one of inkjet printing, slot die coating, spin coating, or lamination.

17. The method of claim 1 , wherein a thickness of the anti-corrosive material layer ranges from 5 μm to 40 μm.

Assignments (9)