Light-emitting diode device
View Patent ↗A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include N light-emitting units with (N−1) times of sequentially connecting via (N−1) conductive connecting structures, and the (N−1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connections.
1. A light-emitting diode device, comprising:
a substrate;
a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array comprises:
a plurality of adjacent light-emitting unit columns;
a first light-emitting unit row;
a second light-emitting unit row; and
a third light-emitting unit row adjacent with the second light-emitting unit row; and
a plurality of conductive connecting structures electrically connecting the plurality of light-emitting units;
wherein at least three light-emitting units in the first light-emitting unit row connect with each other with vertical connecting and the light-emitting units in the second light-emitting unit row and the third light-emitting unit row connect with each other with vertical connecting and horizontal connecting,
wherein the second and the third light-emitting unit rows comprise N light-emitting units comprising (N−1) times of sequentially connecting via (N−1) conductive connecting structures, and N is an even number and the (N−1) times of the sequentially connecting comprise (N/2) times of vertical connecting or (N/2) times of horizontal connecting, and
wherein N≥4.
2. The light-emitting diode device of claim 1 , wherein the plurality of light-emitting units comprising:
a first contact light-emitting unit formed on the substrate;
a second contact light-emitting unit formed on the substrate;
a first electrode pad formed on the first contact light-emitting unit; and
a second electrode pad formed on the second contact light-emitting unit;
wherein the first contact light-emitting unit and the second contact light-emitting unit are disposed on a starting terminal and an ending terminal of the serially-connected array respectively.
3. The light-emitting diode device of claim 2 , wherein the first contact light-emitting unit and the second contact light-emitting unit are not formed on a diagonal of the light-emitting diode device.
4. The light-emitting diode device of claim 2 , wherein the first contact light-emitting unit and the second contact light-emitting unit are respectively formed on a first side and a second side opposite to the first side of the light-emitting diode device.
5. The light-emitting diode device of claim 2 , wherein the first contact light-emitting unit and the second contact light-emitting unit are formed on a first side and a second side adjacent to the first side of the light-emitting diode device respectively.
6. The light-emitting diode device of claim 1 , wherein each of the plurality of light-emitting units comprises:
a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer; and
an active layer formed between the first semiconductor layer and the second semiconductor layer.
7. The light-emitting diode device of claim 6 , wherein one end of the conductive connecting structure connects the first semiconductor layer of one of the plurality of light-emitting units and the other end of the conductive connecting structure connects the second semiconductor layer of an adjacent light-emitting unit of the plurality of light-emitting units.
8. The light-emitting diode device of claim 1 , wherein the substrate is a single growth substrate.
9. The light-emitting diode device of claim 1 , further comprising an insulator between the substrate and the conductive connecting structure.
10. The light-emitting diode device of claim 2 , wherein the second contact light-emitting unit is in one of the second light-emitting unit row and the third light-emitting unit row.
11. The light-emitting diode device of claim 1 , wherein the first light-emitting unit row has α light-emitting units, the second light-emitting unit row has β light-emitting units and α≠β.