IP Library Granted Patent US 10,277,224
Granted Patent B2
US 10,277,224 · App. 15/840,043 · Granted Apr 30, 2019

Bootstrap diode emulator circuit

Inventor: On Bon Peter Chan (Hong Kong, CN)
Assignee: Mosway Technologies Limited
H03K17/567H03K17/06H03K17/687H03K2017/307H03K2017/6875H03K2217/0018H03K2217/0081
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Quick Facts
Patent No.
US 10,277,224
App. No.
15/840,043
Granted
Apr 30, 2019
Kind
B2
Abstract

A bootstrap diode emulator circuit having a cathode and an anode includes a transistor device and a diodic device. The transistor device is arranged at the cathode of the bootstrap diode emulator circuit. The diodic device has a cathode connected to the transistor device and an anode that is the anode of the bootstrap diode emulator circuit.

Claims (39)

1. A bootstrap diode emulator circuit having an anode and a cathode, wherein the bootstrap diode emulator circuit comprises:

a transistor device providing the cathode of the bootstrap diode emulator circuit, wherein

the transistor device is a JFET device having a pinch-off voltage below which the JFET device is turned off, and

the pinch-off voltage of the JFET device is larger in magnitude than a maximum voltage received at the anode of the bootstrap diode emulator circuit; and

a diodic device having

a cathode connected to the transistor device, and

an anode that is the anode of the bootstrap diode emulator circuit.

2. The bootstrap diode emulator circuit in accordance with claim 1 , wherein the JFET device is a high-voltage device and the diodic device is a medium-voltage device.

3. The bootstrap diode emulator circuit in accordance with claim 1 , wherein

the anode of the bootstrap diode emulator circuit receives a minimum voltage, and

the diodic device has a minimum reverse breakdown voltage that is larger in magnitude than the pinch-off voltage of the JFET device minus the minimum voltage received at the anode of the bootstrap diode emulator circuit.

4. The bootstrap diode emulator circuit in accordance with claim 1 , wherein the JFET device has a gate terminal that is grounded.

5. The bootstrap diode emulator circuit in accordance with claim 1 , wherein the JFET device has a source terminal that is connected directly to the diodic device.

6. The bootstrap diode emulator circuit in accordance with claim 1 , wherein the diodic device includes a diode.

7. The bootstrap diode emulator circuit in accordance with claim 1 , wherein the diodic device includes an emulated diode device.

8. The bootstrap diode emulator circuit in accordance with claim 7 , wherein the emulated diode device comprises a semiconductor switch.

9. The bootstrap diode emulator circuit in accordance with claim 8 , wherein the semiconductor switch comprises an NMOS device having drain and source terminals and including a body diode connected between the drain and source terminals.

10. The bootstrap diode emulator circuit in accordance with claim 9 , wherein

the NMOS device includes and gate terminal, and

the gate and source terminals of the NMOS device are connected directly to each other.

11. The bootstrap diode emulator circuit in accordance with claim 10 , further comprising a gate control circuit connected to the gate terminal of the NMOS device.

12. The bootstrap diode emulator circuit in accordance with claim 8 , wherein the semiconductor switch comprises a diode-connected transistor.

13. The bootstrap diode emulator circuit in accordance with claim 12 , wherein the diode-connected transistor comprises a PNP bipolar transistor having base and collector terminals and with the base and collector terminals connected directly to each other.

14. The bootstrap diode emulator circuit in accordance with claim 12 , wherein the diode-connected transistor comprises a NPN bipolar transistor having base and collector terminals and with the base and collector terminals connected directly to each other.

15. The bootstrap diode emulator circuit in accordance with claim 7 , wherein the emulated diode device comprises a PMOS device having drain and source terminals and including a body diode connected between the drain and source terminals.

16. The bootstrap diode emulator circuit in accordance with claim 15 , wherein

the PMOS device includes a gate terminal, and

the gate and source terminals of the PMOS device are connected directly to each other.

17. The bootstrap diode emulator circuit in accordance with claim 15 , wherein the PMOS device includes a gate terminal and further comprising a resistor connected between the gate and source terminals of the PMOS device.

18. A bootstrap diode emulator circuit having an anode and a cathode, wherein the bootstrap diode emulator circuit comprises:

a transistor device providing the cathode of the bootstrap diode emulator circuit;

a diodic device including an emulated diode device and having

a cathode connected to the transistor device, and

an anode that is the anode of the bootstrap diode emulator circuit, wherein the emulated diode device comprises a PMOS device having drain, source, and gate terminals and including a body diode connected between the drain and source terminals; and

a resistor connected between the gate and source terminals of the PMOS device.

19. A bootstrap circuit comprising the bootstrap diode emulator circuit of claim 1 and a capacitor operably connected to the bootstrap diode emulator circuit.

20. An integrated circuit comprising the bootstrap diode emulator circuit of claim 1 .

21. The bootstrap diode emulator circuit in accordance with claim 18 , further comprising a gate control circuit connected to the gate terminal of the PMOS device.

22. An integrated circuit comprising the bootstrap diode emulator circuit of claim 18 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2026
From: MOSWAY TECHNOLOGIES LIMITED
To: CHIPOWN MICROELECTRONICS HONG KONG LIMITED
Reel/Frame 074902/0870 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2017
From: CHAN, ON BON PETER
To: MOSWAY TECHNOLOGIES LIMITED
Reel/Frame 044396/0392 →
Continuity (2)
Provisional Application 62433900 · Dec 14, 2016
Related Publication 20180167065A1 · Jun 14, 2018