Self-limiting and confining epitaxial nucleation
A method of fabricating a semiconductor device includes forming a fin in a substrate and depositing a spacer material on the fin. The method includes recessing the spacer material so that a surface of the fin is exposed. The method includes removing a portion of the fin within lateral sidewalls of the spacer material to form a recess, leaving a portion of the fin on the lateral sidewalls. The method further includes depositing a semiconductor material within the recess.
1. A method of fabricating a semiconductor device, the method comprising:
forming a fin in a substrate, the fin comprising a first semiconductor material;
depositing a spacer material on the fin;
recessing the spacer material so that a surface of the fin is exposed;
removing a portion of the fin within lateral sidewalls of the spacer material to form a recess, leaving a portion of the first semiconductor material of the fin on the lateral sidewalls; and
depositing a second semiconductor material within the recess.
2. The method of claim 1 , wherein the spacer material comprises a dielectric material.
3. The method of claim 1 , wherein the spacer material comprises a low-k material.
4. The method of claim 1 , wherein the spacer material comprises SiBN, SiCN, SiBCN, or any combination thereof.
5. The method of claim 1 , wherein the spacer material surrounds exposed areas of the fin.
6. The method of claim 1 , wherein recessing the spacer material comprises a reactive ion etch.
7. The method of claim 1 , wherein the recess comprises a tapered recess.
8. The method of claim 7 , wherein the tapered recess is arranged below a surface of isolation regions.
9. The method of claim 1 , wherein depositing the second semiconductor material comprises applying an epitaxial growth process.