Light emitting device
A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
1. A light-emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer; and
an electrode structure on the second semiconductor layer,
wherein the electrode structure comprises a conductive layer on the second semiconductor layer, a bonding layer on the conductive layer, and a first barrier layer between the bonding layer and the conductive layer, wherein the first barrier layer comprises a third metal layer and a fourth metal layer, the third metal layer or the fourth metal layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn,
wherein the bonding layer comprises a first metal, the conductive layer comprises a second metal, the second metal has higher standard oxidation potential than the first metal, and
wherein a thickness of the conductive layer is 0.1˜10 times a thickness of the bonding layer or a total thickness of the conductive layer and the bonding layer is 0.75˜0.95 times a thickness of the electrode structure.
2. A light-emitting device according to claim 1 , wherein the electrode structure further comprises an adhesion layer between the second semiconductor layer and the conductive layer.
3. A light-emitting device according to claim 2 , wherein the adhesion layer comprises Cr or Rh, and the adhesion layer comprises a thickness between 5 Å and 50 Å.
4. A light-emitting device according to claim 1 , further comprising a mirror layer between the second semiconductor layer and the conductive layer, wherein the mirror layer comprises Al or Ag.
5. A light-emitting device according to claim 4 , wherein the mirror layer comprises a thickness between 500 Å and 5000 Å.
6. A light-emitting device according to claim 1 , wherein the first metal comprises Au, and the second metal comprises Al, Ag, or Cu.
7. A light-emitting device according to claim 1 , wherein the third metal layer is one to three times thicker than the fourth metal layer.
8. A light-emitting device according to claim 4 , further comprising a second barrier layer between the mirror layer and the conductive layer, wherein the second barrier layer comprises a fifth metal layer and a sixth metal layer, and the fifth metal layer or the sixth metal layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn.
9. A light-emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer comprising a top surface and formed on the active layer; and
an electrode structure on the second semiconductor layer,
wherein the electrode structure comprises a conductive layer on the second semiconductor layer, a bonding layer on the conductive layer, and a first barrier layer between the bonding layer and the conductive layer,
wherein the first barrier layer comprises a third metal layer and a fourth metal layer, the third metal layer or the fourth metal layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn, and
wherein an angle between a sidewall of the bonding layer and a first virtual plan parallel to the top surface is larger than an angle between a sidewall of the first barrier layer and the first virtual plan parallel to the top surface, or an angle between a sidewall of the conductive layer and the first virtual plan parallel to the top surface is larger than an angle between the sidewall of the first barrier layer and the first virtual plan parallel to the top surface.
10. A light-emitting device according to claim 9 , wherein the bonding layer comprises a first metal, the conductive layer comprises a second metal, and the second metal has higher standard oxidation potential than the first metal.
11. A light-emitting device according to claim 9 , wherein the electrode structure comprises an adhesion layer between the conductive layer and the second semiconductor layer, and the adhesion layer comprises Cr or Rh.
12. A light-emitting device according to claim 11 , wherein the adhesion layer comprises a thickness between 5 Å and 50 Å.
13. A light-emitting device according to claim 9 , further comprising a mirror layer between the second semiconductor layer and the conductive layer, wherein the mirror layer comprises Al or Ag.
14. A light-emitting device according to claim 13 , wherein the mirror layer comprises a thickness between 500 Å and 5000 Å.
15. A light-emitting device according to claim 10 , wherein the first metal comprises Au, and the second metal comprises Al, Ag, or Cu.
16. A light-emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer; and
an electrode structure on the second semiconductor layer,
wherein the electrode structure comprises a conductive layer on the second semiconductor layer, a bonding layer on the conductive layer, and a barrier layer between the bonding layer and the conductive layer,
wherein the barrier comprises a third metal layer and a fourth metal layer, and the third metal layer is thicker than the fourth metal layer,
wherein the electrode structure comprises a center region and an edge region, a thickness of the bonding layer at the edge region of the electrode structure is smaller than that at the center region, a thickness of the barrier layer at the edge region of the electrode structure is smaller than that at the center region, or a thickness of the conductive layer at the edge region of the electrode structure is smaller than that at the center region, and
wherein the bonding layer comprises a first most bottom surface formed above a second most bottom surface of the barrier layer or a third most bottom surface of the conductive layer.
17. A light-emitting device according to claim 16 , wherein the bonding layer comprises a first metal, the conductive layer comprises a second metal, and the second metal has higher standard oxidation potential than the first metal.
18. A light-emitting device according to claim 17 , wherein the first metal comprises Au, and the second metal comprises Al, Ag, or Cu.
19. A light-emitting device according to claim 16 , wherein the electrode structure comprises an adhesion layer between the second semiconductor layer and the conductive layer, and the adhesion layer comprises Cr or Rh.
20. A light-emitting device according to claim 19 , further comprising a mirror layer between the second semiconductor layer and the conductive layer, wherein the mirror layer comprises Al or Ag.