LAMINATE, SILICONE RESIN LAYER-ATTACHED SUPPORT SUBSTRATE, SILICONE RESIN LAYER-ATTACHED RESIN SUBSTRATE, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
The present invention provides a laminate including a support substrate, a silicone resin layer and a substrate arranged in this order, in which the silicone resin layer contains at least one metal element selected from the group consisting of 3d transition metals, 4d transition metals, lanthanide metals, and bismuth and in which end portion degradation of a silicone resin layer is suppressed.
1 . A laminate, comprising:
a support substrate; a silicone resin layer; and a substrate arranged in this order,
wherein the silicone resin layer comprises at least one metal element selected from the group consisting of a 3d transition metal, a 4d transition metal, a lanthanide metal, and bismuth.
2 . The laminate according to claim 1 , wherein the silicone resin layer comprises at least one metal element selected from the group consisting of a 3d transition metal, a lanthanide metal, and bismuth.
3 . The laminate according to claim 1 , wherein the silicone resin layer comprises at least one metal element selected from the group consisting of iron, manganese, copper, cerium, cobalt, nickel, chromium, and bismuth.
4 . The laminate according to claim 1 , wherein the silicone resin layer comprises at least one metal element selected from the group consisting of iron, manganese, copper, cerium, and bismuth.
5 . The laminate according to claim 1 , wherein a plurality of the substrates are laminated on the support substrate through the silicone resin layer.
6 . The laminate according to claim 1 , wherein the substrate is a glass substrate.
7 . The laminate according to claim 1 , wherein the substrate is a resin substrate.
8 . The laminate according to claim 7 , wherein the resin substrate is a polyimide resin substrate.
9 . The laminate according to claim 1 , wherein the substrate is a substrate comprising a semiconductor material.
10 . The laminate according to claim 9 , wherein the semiconductor material is Si, SiC, GaN, gallium oxide, or diamond.
11 . A silicone resin layer-attached support substrate, comprising:
a support substrate and a silicone resin layer arranged in this order, wherein the silicone resin layer comprises at least one metal element selected from the group consisting of a 3d transition metal, a 4d transition metal, a lanthanide metal, and bismuth.
12 . A method for manufacturing an electronic device, the method comprising:
forming an electronic device member on a surface of the substrate of the laminate according to claim 1 , to obtain an electronic device member-attached laminate; and
removing a silicone resin layer-attached support substrate which comprises the support substrate and the silicone resin layer, from the electronic device member-attached laminate, to obtain an electronic device comprising the substrate and the electronic device member.
13 . A silicone rein layer-attached resin substrate, comprising:
a resin substrate and a silicone resin layer arranged in this order,
wherein the silicone resin layer comprises at least one metal element selected from the group consisting of a 3d transition metal, a 4d transition metal, a lanthanide metal, and bismuth.
14 . A method for manufacturing an electronic device, the method comprising:
forming a laminate using the silicone resin layer-attached resin substrate according to claim 13 , and a support substrate;
forming an electronic device member on a surface of the resin substrate of the laminate, to obtain an electronic device member-attached laminate; and
removing the support substrate and the silicone resin layer from the electronic device member-attached laminate, to obtain an electronic device comprising the resin substrate and the electronic device member.