Phosphor deposition system for LEDs
A method to produce a light-emitting device package includes mounting junctions on pads of a metalized substrate, where the junctions are at least partially electrically insulated from each other, and forming wavelength converters, where each wavelength converter is located over a different junction and separated by a gap from neighboring wavelength converters.
1. A light-emitting device comprising:
a light-emitting diode (LED) die comprising:
a growth substrate;
an array of semiconductor diode junctions comprising a first plurality of semiconductor diode junctions disposed on a first side of the growth substrate; and a second plurality of semiconductor diode junctions disposed on the first side of the growth substrate;
a first group of series connected transparent conductors disposed on a second side of the growth substrate opposite from the first side of the growth substrate and opposite from corresponding ones of the first plurality of semiconductor diode junctions;
a second group of series connected transparent conductors disposed on the second side of the growth substrate and disposed opposite from corresponding ones of the second plurality of semiconductor diode junctions; and
wavelength converters disposed on the transparent conductors, each wavelength converter located opposite from a corresponding different one of the semiconductor diode junctions, wavelength converters disposed opposite from the first plurality of semiconductor diode junctions differ in composition from wavelength converters disposed opposite from the second plurality of semiconductor diode junctions.
2. The light emitting device of claim 1 , wherein the first group of transparent conductors and the second group of the transparent conductors form diagonal strings or diagonally alternating strings.
3. The light emitting device of claim 1 , wherein the wavelength converters disposed opposite from the first plurality of semiconductor diode junctions each comprise a cool-white phosphor layer, the wavelength converters disposed opposite from the second plurality of semiconductor diode junctions each comprise a warm-white phosphor layer, and the semiconductor diode junctions are blue emitting junctions.
4. The light emitting device of claim 1 , wherein each wavelength converter comprises a footprint smaller than its underlying semiconductor diode junction.
5. The light emitting device of claim 1 , wherein the wavelength converters are separated by gaps between them.
6. The light emitting device of claim 1 , wherein the wavelength converters abut against each other.
7. The light emitting device of claim 1 , further comprising a single primary optic over the LED die, wherein the primary optic comprises an overmolded silicone lens or window, an overmolded glass lens or window, a preformed silicone lens or window, or a preformed glass lens or window.
8. The light emitting device of claim 1 , wherein the transparent conductors comprise at least one of antimony tin oxide, indium tin oxide, or silver nanowire.
9. The light emitting device of claim 1 , wherein the transparent conductors are square shaped.
10. The light emitting device of claim 1 , wherein each transparent conductor is separated from a neighboring transparent conductor by a gap.
11. The light emitting device of claim 1 , wherein the growth substrate is a sapphire substrate.
12. The light emitting device of claim 1 , comprising insulating layers between two junctions.
13. The light emitting device of claim 1 , wherein the first and second plurality of junctions form a checkboard pattern.