Shorted p-n junction
A method and apparatus for removing free carriers from a waveguide using a p type semiconductor and an n type semiconductor connected by a short.
1. An apparatus comprising:
an intra-cavity ring resonator with a p type semiconductor and an n type semiconductor; wherein the p type semiconductor and the n type semiconductor are connected via an electrical short from the p type semiconductor to the n type semiconductor; wherein an electrical path of the short is smaller than a free carrier lifetime.
2. The apparatus of claim 1 wherein the p type semiconductor includes a p++ semiconductor and the n type semiconductor includes an n++ type semiconductor.
3. The apparatus of claim 2 wherein the p type semiconductor includes a p+ semiconductor and the n type semiconductor includes an n+ type semiconductor.
4. The apparatus of claim 1 wherein the intra-cavity ring resonator is on a chip and the short is made using on-chip metals.
5. The apparatus of claim 1 wherein the short occurs across a portion of the intra-cavity ring resonator.
6. The apparatus of claim 1 wherein the short occurs across a substantial portion of the intra-cavity ring resonator.
7. The apparatus of claim 1 wherein the intra-cavity ring resonator is part of a tunable laser.
8. A method comprising:
removing free carriers from an intra-cavity ring resonator using a p type semiconductor and an n type semiconductor connected by a short with an electrical path smaller than a free carrier lifetime by shorting the free carrier before it heats the intra-cavity ring resonator.
9. The method of claim 8 wherein the p type semiconductor includes a p++ semiconductor and the n type semiconductor includes an n++ type semiconductor.
10. The method of claim 9 wherein the p type semiconductor includes a p+ semiconductor and the n type semiconductor includes an n+ type semiconductor.
11. The method of claim 8 wherein the intra-cavity ring resonator is on a chip and the short is made using on-chip metals.
12. The method of claim 8 wherein the short occurs across a portion of the intra-cavity ring resonator.
13. The method of claim 8 wherein the short occurs across a substantial portion of the intra-cavity ring resonator.
14. The method of claim 8 wherein the intra-cavity ring resonator is part of a tunable laser.
15. A system comprising:
a tunable laser, and
an intra-cavity ring resonator with a p type semiconductor and an n type semiconductor; wherein the p type semiconductor and the n type semiconductor are connected via an electrical short from the p type semiconductor to the n type semiconductor; wherein an electrical path of the short is smaller than a free carrier lifetime.
16. The apparatus of claim 15 wherein the p type semiconductor includes a p++ semiconductor and the n type semiconductor includes an n++ type semiconductor.
17. The apparatus of claim 16 wherein the p type semiconductor includes a p+ semiconductor and the n type semiconductor includes an n+ type semiconductor.
18. The apparatus of claim 15 wherein the intra-cavity ring resonator is on a chip and the short is made using on-chip metals.
19. The apparatus of claim 15 wherein the short occurs across a portion of the intra-cavity ring resonator.
20. The apparatus of claim 15 wherein the short occurs across a substantial portion of the intra-cavity ring resonator.