Ultra-wideband light emitting diode and optical detector comprising aluminum gallium arsenide and method of fabricating the same
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a light-emitting diode (LED) includes a substrate, a carrier confinement (CC) region positioned over the substrate, an active region positioned over the CC region, and an electron blocking layer (EBL) positioned over the active region. The CC region includes a first CC layer comprising aluminum gallium arsenide and a second CC layer position over the first CC layer. The second CC layer and the electron blocking layer (EBL) also each include aluminum gallium arsenide. The active region is configured to have a transient response time of less than 500 picoseconds (ps).
1. A light-emitting diode (LED) comprising:
a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium arsenide; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;
an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);
a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and
an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein:
the active region comprises gallium arsenide;
the active region is at least one of a quantum well structure and a multi quantum well structure;
the first barrier layer has an aluminum composition between 25% and 45%; and
the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.
2. The LED of claim 1 , wherein the active region has a thickness between 50 and 150 angstroms for each quantum well.
3. The LED of claim 2 , wherein the first barrier layer has a thickness between 25 and 75 angstroms.
4. The LED of claim 3 , further comprising:
an n-type contact layer positioned between the substrate and the CC region; and
a p-type contact layer positioned over the second barrier layer.
5. The LED of claim 4 , wherein the first CC layer has an aluminum composition between 25% and 45% and the second CC layer has an aluminum composition between 25% and 45%.
6. The LED of claim 5 , wherein the first CC layer has a thickness between 100 and 2000 angstroms and the second CC layer has a thickness between 25 and 75 angstroms.
7. The LED of claim 6 , wherein the EBL has an aluminum composition between 25% and 45%.
8. The LED of claim 7 , wherein the EBL has a thickness between 100 and 2000 angstroms.
9. The LED of claim 6 , wherein:
the n-type contact layer and the p-type contact layer each comprise gallium arsenide;
the n-type contact layer has a thickness between 5000 and 20000 angstroms; and
the p-type contact layer has a thickness between 500 and 5000 angstroms.
10. The LED of claim 1 , wherein the LED is implemented in a flip-chip package.
11. The LED of claim 1 , wherein the LED is implemented within an optical transceiver and the optical transceiver further comprises an optical detector.
12. The LED of claim 1 , wherein:
the LED is configured to transmit at a first wavelength;
the LED is a first LED within an array of LEDs; and
a second LED within the array of LEDs is configured to operate at a second wavelength.
13. The LED of claim 12 , wherein:
the array of LEDs is implemented within an optical transceiver;
the optical transceiver further comprises an array of optical detectors;
a first optical detector within the array of optical detectors is configured to receive at the first wavelength; and
a second optical detector within the array of optical detectors is configured to receive at the second wavelength.
14. The LED of claim 12 , wherein the LED is implemented in a flip-chip package.
15. The LED of claim 13 , wherein the LED is implemented in a flip-chip package.
16. The LED of claim 1 , wherein the LED is configured for variable wavelength modulation.
17. The LED of claim 16 , wherein the LED is implemented in a flip-chip package.
18. The LED of claim 1 , wherein the LED is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector.
19. The LED of claim 13 , wherein the first optical detector and the second optical detector are implemented within a first epitaxial structure.
20. A method of forming a light-emitting diode (LED), comprising:
providing an epitaxial structure on a substrate, the epitaxial structure comprising:
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium arsenide; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;
an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);
a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and
an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein:
the active region comprises gallium arsenide;
the active region is at least one of a quantum well structure and a multi quantum well structure;
the first barrier layer has an aluminum composition between 25% and 45%; and
the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.