Light-emitting device and method of manufacturing the same
View Patent ↗The present invention discloses a light-emitting device and the manufacturing method thereof. The light-emitting device comprises: a substrate including a protrusion part and a base part; a lattice buffer layer formed on the substrate and including a first region substantially right above the protrusion part and a second region substantially right above the base part, wherein the first region includes a recess therein; a light-emitting stack formed on the lattice buffer layer and the recess; and electrodes formed on and electrically connected to the light-emitting stack.
1. A light-emitting device, comprising:
a substrate, comprising a protrusion part and a base part;
a lattice buffer layer, formed on the substrate, wherein the lattice buffer layer comprises a first region and a second region, wherein the first region is substantially right above the protrusion part, and the second regions is substantially right above the base part; and
a recess formed in the first region of the lattice buffer layer other than the second region;
a light-emitting stack, formed on the lattice buffer layer and the recess, wherein the light-emitting stack comprises a n-type semiconductor layer, an active layer and a p-type semiconductor layer; and
a first electrode and a second electrode, electrically connected to the n-type semiconductor layer and the p-type semiconductor layer respectively.
2. The light-emitting device according to claim 1 , wherein the protrusion part comprises a bottom width between 10 nm and 1000 nm and a height between 10 nm and 1000 nm.
3. The light-emitting device according to claim 1 , wherein the base part comprises a bottom width between 10 nm and 3000 nm.
4. The light-emitting device according to claim 1 , wherein the recess comprises a bottom reaching a top surface of each of the protrusion parts.
5. The light-emitting device according to claim 4 , wherein the recess comprises a bottom width which is 1-3 times the top width of the protrusion part.
6. The light-emitting device according to claim 1 , further comprising a defect-blocking structure, formed in the recess.
7. The light-emitting device according to claim 6 , wherein the defect-blocking structure comprises insulating oxide or insulating nitride.
8. The light-emitting device according to claim 6 , further comprising a reflective layer formed in the recess.
9. The light-emitting device according to claim 8 , wherein the reflective layer is formed in the recess and between the defect-blocking structure and the lattice buffer layer.
10. The light-emitting device according to claim 8 , wherein the reflective layer comprises a metal reflector or a Distributed Bragg reflector (DBR).