Micro light emitting diode chip and display panel having semiconductor epitaxial structure
A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
1. A display panel, comprising:
a backplane, having a plurality of sub-pixel regions and a plurality of pads; and
a plurality of micro light emitting diode chips located in the sub-pixel regions, wherein each of the micro light emitting diode chips has a plurality of light-emitting regions and comprises:
a semiconductor epitaxial structure, comprising a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers disposed at interval and a plurality of light-emitting layers disposed in the light-emitting regions at interval, wherein the light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layers and electrically contact to the first-type doped semiconductor layer;
a first electrode, electrically connected and in physical contact with the first-type doped semiconductor layer, and overlapped with the second-type doped semiconductor layers and the light-emitting layers; and
a plurality of second electrodes, disposed at interval and electrically connected to the second-type doped semiconductor layers,
wherein the micro light emitting diode chips are electrically connected to the backplane through the pads and the backplane controls the micro light emitting diode chips to emit light in the corresponding sub-pixel regions,
wherein the light-emitting layers are independently controlled to emit light,
wherein a type of carriers provided by the first electrode is a first type carrier and the other type of carriers provided by the second electrodes is a second type carrier, the first electrode and one of the second electrodes provide the first type carrier and the second type carrier to one of the light-emitting layers, and the first electrode and another one of the second electrodes provide the first type carrier and the second type carrier to another one of the light-emitting layers,
wherein the first electrode is electrically connected to one of the pads of the backplane for providing the first type carrier, and at least one of the second electrodes is electrically connected to another one of the pads of the backplane for providing the second type carrier.
2. The display panel according to claim 1 , wherein a range of a diagonal length of the micro light emitting diode chip falls in a range of 2 microns to 250 microns.
3. The micro light emitting diode chip according to claim 1 , wherein the semiconductor epitaxial structure has at least one trench, the at least one trench separates the second-type doped semiconductor layers, and the light-emitting layers and exposes the first-type doped semiconductor layer, and the light-emitting layers are connected to the first-type doped semiconductor layer.
4. The display panel according to claim 3 , wherein the first electrode and the second electrodes are located at the same side of the semiconductor epitaxial structure and the semiconductor epitaxial structure has a plurality of trenches, and the first electrode is electrically connected to the first-type doped semiconductor layer through one of the trenches.
5. The display panel according to claim 3 , wherein the first electrode and the second electrodes of each of the micro light emitting diode chips are located at two opposite sides of the semiconductor epitaxial stricture, the second electrodes are located between the backplane and the semiconductor epitaxial structure, and the pads are electrically contacted to the second electrodes.
6. The display panel according to claim 5 , wherein the number of the pads disposed in each of the sub-pixel regions is the same with the number of the second electrodes of each of the micro light emitting diode chips.
7. The display panel according to claim 3 , wherein the first electrode and the second electrodes of each of the micro light emitting diode chips are located at two opposite sides of the semiconductor epitaxial structure respectively, and the first electrode is located between the backplane and the semiconductor epitaxial structure and is electrically contacted to one of the pads.