Alloyed Rod Structure in a Nanocrystalline Quantum Dot
A quantum dot includes a nanocrystalline core and an alloyed nanocrystalline shell made of a semiconductor material composition different from the nanocrystalline core. The alloyed nanocrystalline shell is bonded to and completely surrounds the nanocrystalline core.
1 . A quantum dot, comprising:
an alloyed nanocrystalline core comprising a semiconductor material composition; and
an alloyed nanocrystalline shell comprising a semiconductor material composition different from the nanocrystalline core's semiconductor material composition, the alloyed nanocrystalline shell bonded to and completely surrounding the nanocrystalline core.
2 . The quantum dot of claim 1 , wherein the alloyed nanocrystalline core's semiconductor material composition comprises two of three chemical elements of the alloyed nanocrystalline shell's semiconductor material composition.
3 . The quantum dot of claim 1 , wherein the alloyed nanocrystalline core's semiconductor material composition comprises a Group II-VI semiconductor material composition.
4 . The quantum dot of claim 3 , wherein the Group II-VI semiconductor material composition consists of CdSeS,
5 . The quantum dot of claim 3 , wherein the alloyed nanocrystalline shell's semiconductor material composition comprises a Group II-VI semiconductor material composition different than the alloyed nanocrystalline core's Group II-VI semiconductor material composition.
6 . The quantum dot of claim 5 , wherein the alloyed nanocrystalline shell's Group II-VI semiconductor material composition different than the alloyed nanocrystalline core's Group II-VI semiconductor material composition consists of CdZnS.
7 . The quantum dot of claim 1 , wherein the alloyed nanocrystalline core is an anisotropic alloyed nanocrystalline core.
8 . The quantum dot of claim 7 , wherein the anisotropic alloyed nanocrystalline core has an aspect ratio between, but not including, 1.0 and 2.0.
9 . The quantum dot of claim 1 , further comprising an outer nanocrystalline shell bonded to and surrounding the alloyed nanocrystalline shell, the outer nanocrystalline shell comprising a semiconductor material composition different from the alloyed nanocrystalline core's semiconductor material composition and the alloyed nanocrystalline shell's semiconductor material composition.
10 . The quantum dot of claim 1 , further comprising an insulator layer encapsulating the alloyed nanocrystalline shell.
11 . A quantum dot, comprising:
a ternary semiconductor nanocrystalline shell; and
a ternary semiconductor nanocrystalline core comprising two of three elements of the ternary semiconductor nanocrystalline shell, the ternary semiconductor nanocrystalline shell bonded to and completely surrounding the semiconductor nanocrystalline core.
12 . The quantum dot of claim 11 , wherein the ternary semiconductor nanocrystalline shell comprises a first semiconductor material composition, and wherein the ternary semiconductor nanocrystalline core comprises a second semiconductor material composition different than the first semiconductor material composition.
13 . The quantum dot of claim 12 , wherein the first semiconductor material composition comprises a first Group II-VI semiconductor material composition.
14 . The quantum dot of claim 13 , wherein the first Group II-VI semiconductor composition consists of CdSeS.
15 . The quantum dot of claim 12 , wherein the ternary semiconductor nanocrystalline shell consists of a second Group II-VI semiconductor material different than the first Group II-VI semiconductor material.
16 . The quantum dot of claim 15 , wherein the second Group II-VI semiconductor material is CdZnS.
17 . The quantum dot of claim 11 , further comprising an outer nanocrystalline shell encapsulating the ternary semiconductor nanocrystalline shell.
18 . The quantum dot of claim 17 , wherein the outer nanocrystalline shell comprises ZnS.
19 . The quantum dot of claim 11 , wherein the ternary semiconductor nanocrystalline core is an anisotropic ternary semiconductor nanocrystalline core.
20 . The quantum dot of claim 19 , wherein the anisotropic ternary semiconductor nanocrystalline core has an aspect ratio between, but not including, 1.0 and 2.0.
21 . The quantum dot of claim 11 , further comprising a binary outer nanocrystalline shell bonded to and surrounding the ternary semiconductor nanocrystalline shell, the binary outer nanocrystalline shell comprising a semiconductor material composition different from the ternary semiconductor nanocrystalline core and the ternary semiconductor nanocrystalline shell.
22 . The quantum dot of claim 11 , further comprising an insulator layer encapsulating the ternary semiconductor nanocrystalline shell.
23 . A method of tuning an exciton peak for a quantum dot, the comprising:
selecting an alloyed nanocrystalline core corresponding to a targeted exciton peak for the quantum dot;
forming the alloyed nanocrystalline core;
forming an alloyed nanocrystalline shell comprising a semiconductor material composition different from the alloyed nanocrystalline core, the alloyed nanocrystalline shell bonded to and completely surrounding the alloyed nanocrystalline core.
24 . The method of claim 23 , wherein forming the alloyed nanocrystalline core comprises forming a first semiconductor material composition, and wherein forming the alloyed nanocrystalline shell comprises forming a second semiconductor material composition different than the first semiconductor material composition.
25 . The method of claim 24 , wherein the first semiconductor material composition comprises two of three chemical elements of the second semiconductor material composition.
26 . The method of claim 23 , wherein forming the alloyed nanocrystalline core comprises forming a Group II-VI semiconductor material composition.
27 . The method of claim 26 , wherein forming the Group II-VI semiconductor material composition comprises forming a semiconductor material composition consisting of CdSeS.
28 . The method of claim 26 , wherein forming the alloyed nanocrystalline shell comprises forming a Group II-VI semiconductor material composition different than the alloyed nanocrystalline core's Group II-VI semiconductor material composition.
29 . The method of claim 28 , wherein forming forming the alloyed nanocrystalline shell's Group II-VI semiconductor material composition comprises forming a semiconductor material composition consisting of CdZnS.
30 . The method of claim 23 , wherein the exciton peak is approximately 550 nanometers or less.