System and method for tuning an electrochemical cell stack
The present disclosure is directed to a method for tuning the performance of at least one electrochemical cell of an electrochemical cell stack. The method includes supplying power to an electrochemical cell stack. The electrochemical cell stack includes a plurality of electrochemical cells. The method further includes monitoring a parameter of at least one electrochemical cell and determining if an electrochemical cell becomes impaired. The method also includes diverting a fraction of the current flow from the impaired electrochemical cell during operation of the electrochemical cell stack.
1. A system for tuning the performance of an electrochemical cell, the system comprising:
an electrochemical cell stack including two or more electrochemical cells, wherein each electrochemical cell includes:
an active area for generating hydrogen;
a shunt area outside of a boundary of the active area;
at least one bipolar plate adjacent the active area; and
a shunt configured to be installed in the shunt area between at least a pair of bipolar plates bridging an active area of an impaired electrochemical cell, and wherein the shunt is partially outside of the shunt area and a current flow is diverted from the impaired electrochemical cell by the shunt when the electrochemical cell is in operation.
2. The system of claim 1 , wherein the shunt has a non-zero resistance, the shunt being configured to divert a portion of the current flow to reduce a voltage across the impaired electrochemical cell.
3. The system of claim 1 , wherein the shunt is a static shunt having a predetermined resistance.
4. The system of claim 3 , wherein the predetermined resistance is about zero.
5. The system of claim 1 , wherein the shunt is a variable shunt resistor having a variable resistance based on at least one of a voltage across the electrochemical cell, a temperature of the electrochemical cell, and the resistance across the electrochemical cell.
6. The system of claim 5 , wherein the variable shunt resistor is a bipolar junction transistor or a junction gate field-effector transistor.
7. The system of claim 1 , wherein the shunt is made of a material selected from copper, aluminum, stainless steel, brass, and nickel.
8. The system of claim 1 , wherein the shunt is coated with a material selected from gold, silver, tin, and semi-conductive materials.
9. The system of claim 1 , wherein the shunt results in a voltage reduction across the impaired cell.
10. A system for tuning the performance of at least one electrochemical cell in an electrochemical cell stack, the system comprising:
an electrochemical cell stack including two or more electrochemical cells, wherein each electrochemical cell includes:
an active area for generating hydrogen; and
a shunt area outside of a boundary of the active area;
at least one bipolar plate adjacent the active area; and
bi-directional converters, wherein the bi-directional converters are arranged in the shunt area to provide current adjustments to at least one electrochemical cell of the electrochemical cell stack.
11. The system of claim 10 , wherein each bi-directional converter includes a buck-boost converter circuit.
12. The system of claim 10 , wherein one bi-directional converter is configured to operate in a boost mode to divert a fraction of the current flow from an impaired electrochemical cell, and the other bi-directional converter is configured to operate in a buck mode to output the same amount of current to a neighboring electrochemical cell.
13. The system of claim 10 , wherein each bi-directional converter is a DC to DC converter.